Datasheet PMWD19UN - NXP MOSFET, N, TSSOP-8 — Ficha de datos

NXP PMWD19UN

Part Number: PMWD19UN

Descripción detallada

Manufacturer: NXP

Description: MOSFET, N, TSSOP-8

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Docket:
PMWD19UN
Dual µTrenchMOSTM ultra low level FET
Rev.

01 -- 20 December 2002
M3D647
Product data

Specifications:

  • Base Number: 4
  • Capacitance Ciss Typ: 1478 pF
  • Continuous Drain Current Id: 5.6 A
  • Drain Source Voltage Vds: 30 V
  • Mounting Type: SMD
  • Number of Transistors: 2
  • On Resistance Rds(on): 23 MOhm
  • On State Resistance @ Vgs = 1.8V: 35 MOhm
  • On State Resistance @ Vgs = 4.5V: 23 MOhm
  • Package / Case: TSSOP
  • Pin Configuration: D1(1), S1(2+3), G1(4), D2(8), S2(6+7), G2(5)
  • Power Dissipation Pd: 2.3 W
  • Pulse Current Idm: 20 A
  • SMD Marking: 19UN
  • SVHC: No SVHC (18-Jun-2010)
  • Threshold Voltage Vgs Typ: 700 mV
  • Transistor Case Style: TSSOP
  • Transistor Polarity: Dual N Channel
  • Voltage Vds Typ: 30 V
  • Voltage Vgs Max: 10 V
  • Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes