Datasheet SI4922BDY-T1-E3 - Vishay MOSFET, DUAL, N, SOIC — Ficha de datos

Vishay SI4922BDY-T1-E3

Part Number: SI4922BDY-T1-E3

Descripción detallada

Manufacturer: Vishay

Description: MOSFET, DUAL, N, SOIC

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Specifications:

  • Base Number: 4922
  • Continuous Drain Current Id: 8 A
  • Current Id Max: 8 A
  • Drain Source Voltage Vds: 30 V
  • Module Configuration: Dual
  • Mounting Type: SMD
  • N-channel Gate Charge: 19nC
  • Number of Pins: 8
  • On Resistance Rds(on): 16 MOhm
  • On State Resistance @ Vgs = 2.5V: 24 MOhm
  • On State Resistance @ Vgs = 4.5V: 18 MOhm
  • On State resistance @ Vgs = 10V: 16 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: SOIC
  • Power Dissipation Pd: 2 W
  • Rds(on) Test Voltage Vgs: 12 V
  • Threshold Voltage Vgs Typ: 1.8 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 30 V
  • Voltage Vgs Max: 1.8 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

  • Panasonic - EYGA091203SM
  • Panasonic - EYGA121807A
  • Roth Elektronik - RE932-01

Otros nombres:

SI4922BDYT1E3, SI4922BDY T1 E3