Datasheet SQ4942EY-T1-GE3 - Vishay MOSFET, NN CH, W DIODE, 40 V, 8 A, SO8 — Ficha de datos

Vishay SQ4942EY-T1-GE3

Part Number: SQ4942EY-T1-GE3

Descripción detallada

Manufacturer: Vishay

Description: MOSFET, NN CH, W DIODE, 40 V, 8 A, SO8

data sheetDownload Data Sheet

Docket:
SQ4942EY
Vishay Siliconix
Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 40 0.020 0.026 8 Dual

Specifications:

  • Continuous Drain Current Id: 8 A
  • Drain Source Voltage Vds: 40 V
  • Module Configuration: Dual
  • Number of Pins: 8
  • On Resistance Rds(on): 0.016 Ohm
  • Operating Temperature Range: -55°C to +175°C
  • Power Dissipation Pd: 4.4 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: 2 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: N Channel

RoHS: Yes

Accessories:

  • Analog Devices - ADP3623ARDZ-RL
  • Fischer Elektronik - FK 244 13 D2 PAK
  • International Rectifier - IRF7469PBF

Otros nombres:

SQ4942EYT1GE3, SQ4942EY T1 GE3