Datasheet SI4906DY-T1-E3 - Vishay DUAL N CHANNEL MOSFET, 40 V, SOIC — Ficha de datos

Vishay SI4906DY-T1-E3

Part Number: SI4906DY-T1-E3

Descripción detallada

Manufacturer: Vishay

Description: DUAL N CHANNEL MOSFET, 40 V, SOIC

data sheetDownload Data Sheet

Docket:
Si4906DY
Vishay Siliconix
Dual N-Channel 40-V (D-S) MOSFET
FEATURES
ID (A)a 6.6 5.8 Qg (Typ.) 6.6

Simulation ModelSimulation Model

Specifications:

  • Continuous Drain Current, Id: 6.6 A
  • Drain Source Voltage, Vds: 40 V
  • On Resistance, Rds(on): 0.05 Ohm
  • Rds(on) Test Voltage, Vgs: 16 V
  • Threshold Voltage, Vgs Typ: 2.2 V
  • Transistor Polarity: Dual N Channel

RoHS: Y-Ex

Otros nombres:

SI4906DYT1E3, SI4906DY T1 E3