Datasheet SI7960DP-T1-E3 - Vishay DUAL N CHANNEL MOSFET, 60 V, SOIC — Ficha de datos

Vishay SI7960DP-T1-E3

Part Number: SI7960DP-T1-E3

Descripción detallada

Manufacturer: Vishay

Description: DUAL N CHANNEL MOSFET, 60 V, SOIC

Specifications:

  • Continuous Drain Current Id: 9.7 A
  • Drain Source Voltage Vds: 60 V
  • On Resistance Rds(on): 25 MOhm
  • Rds(on) Test Voltage Vgs: 20 V
  • Threshold Voltage Vgs Typ: 3 V
  • Transistor Polarity: N Channel

RoHS: Y-Ex

Otros nombres:

SI7960DPT1E3, SI7960DP T1 E3