Datasheet SI4925BDY - Vishay MOSFET, DUAL, PP, SO-8 — Ficha de datos
Part Number: SI4925BDY
Descripción detallada
Manufacturer: Vishay
Description: MOSFET, DUAL, PP, SO-8
Docket:
Si4925BDY
Vishay Siliconix
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
Specifications:
- Continuous Drain Current Id: 5.3 A
- Current Id Max: -5.3 A
- Drain Source Voltage Vds: 30 V
- Fall Time tf: 34 ns
- Junction Temperature Tj Max: 150°C
- Junction Temperature Tj Min: -55°C
- Mounting Type: SMD
- Number of Pins: 8
- Number of Transistors: 2
- On Resistance Rds(on): 25 MOhm
- On State Resistance @ Vgs = 4.5V: 41 MOhm
- On State resistance @ Vgs = 10V: 25 MOhm
- Operating Temperature Range: -55°C to +150°C
- P Channel Gate Charge: 33nC
- Package / Case: SOIC
- Power Dissipation Pd: 1.1 W
- Pulse Current Idm: 40 A
- Rds(on) Test Voltage Vgs: -10 V
- Rise Time: 12 ns
- Threshold Voltage Vgs Typ: -3 V
- Transistor Case Style: SOIC
- Transistor Polarity: P Channel
- Turn Off Time: 60 ns
- Turn On Time: 9 ns
- Voltage Vds Typ: -30 V
- Voltage Vgs Max: -20 V
- Voltage Vgs Rds on Measurement: 4.5 V
RoHS: Yes