Datasheet SI4966DY - Vishay MOSFET, DUAL, NN, SO-8 — Ficha de datos

Vishay SI4966DY

Part Number: SI4966DY

Descripción detallada

Manufacturer: Vishay

Description: MOSFET, DUAL, NN, SO-8

Specifications:

  • Continuous Drain Current Id: 7.2 A
  • Current Id Max: 7.1 A
  • Drain Source Voltage Vds: 20 V
  • Mounting Type: SMD
  • N-channel Gate Charge: 25nC
  • Number of Pins: 8
  • Number of Transistors: 2
  • On Resistance Rds(on): 25 MOhm
  • On State Resistance @ Vgs = 2.5V: 35 MOhm
  • On State Resistance @ Vgs = 4.5V: 25 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: SOIC
  • Power Dissipation Pd: 2 W
  • Pulse Current Idm: 40 A
  • Rds(on) Test Voltage Vgs: 4.5 V
  • SMD Marking: SI4966DY
  • Threshold Voltage Vgs Typ: 1.5 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 20 V
  • Voltage Vgs Max: 12 V
  • Voltage Vgs Rds on Measurement: 2.5 V

RoHS: Yes