Datasheet SI9926BDY - Vishay MOSFET, DUAL, NN, SO-8 — Ficha de datos

Vishay SI9926BDY

Part Number: SI9926BDY

Descripción detallada

Manufacturer: Vishay

Description: MOSFET, DUAL, NN, SO-8

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Docket:
Si9926BDY
New Product
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY

Specifications:

  • Continuous Drain Current Id: 6.2 A
  • Current Id Max: 6.2 A
  • Drain Source Voltage Vds: 20 V
  • Junction Temperature Tj Max: 150°C
  • Junction Temperature Tj Min: -55°C
  • Mounting Type: SMD
  • N-channel Gate Charge: 11nC
  • Number of Pins: 8
  • Number of Transistors: 2
  • On Resistance Rds(on): 20 MOhm
  • On State Resistance @ Vgs = 2.5V: 30 MOhm
  • On State Resistance @ Vgs = 4.5V: 20 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: SOIC
  • Packaging Type: Reel
  • Power Dissipation Pd: 1.14 W
  • Pulse Current Idm: 30 A
  • Rds(on) Test Voltage Vgs: 4.5 V
  • Threshold Voltage Vgs Typ: 1.5 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 20 V
  • Voltage Vgs Max: 12 V
  • Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes