Datasheet SI4948BEY - Vishay MOSFET, DUAL, PP, SO-8 — Ficha de datos

Vishay SI4948BEY

Part Number: SI4948BEY

Descripción detallada

Manufacturer: Vishay

Description: MOSFET, DUAL, PP, SO-8

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Simulation ModelSimulation Model

Specifications:

  • Continuous Drain Current Id: 2.4 A
  • Current Id Max: -2.4 A
  • Drain Source Voltage Vds: 60 V
  • Fall Time tf: 35 ns
  • Junction Temperature Tj Max: 175°C
  • Junction Temperature Tj Min: -55°C
  • Module Configuration: Dual
  • Mounting Type: SMD
  • Number of Pins: 8
  • Number of Transistors: 2
  • On Resistance Rds(on): 120 MOhm
  • On State Resistance @ Vgs = 4.5V: 150 MOhm
  • On State resistance @ Vgs = 10V: 120 MOhm
  • Operating Temperature Range: -55°C to +175°C
  • P Channel Gate Charge: 14.5nC
  • Package / Case: SOIC
  • Power Dissipation Pd: 1.4 W
  • Pulse Current Idm: 25 A
  • Rds(on) Test Voltage Vgs: -10 V
  • Rise Time: 15 ns
  • Threshold Voltage Vgs Typ: -3 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: P Channel
  • Turn Off Time: 50 ns
  • Turn On Time: 10 ns
  • Voltage Vds Typ: -60 V
  • Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes