Datasheet SI7922DN - Vishay MOSFET, DUAL, NN, POWERPAK — Ficha de datos

Vishay SI7922DN

Part Number: SI7922DN

Descripción detallada

Manufacturer: Vishay

Description: MOSFET, DUAL, NN, POWERPAK

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Simulation ModelSimulation Model

Specifications:

  • Continuous Drain Current Id: 1.8 A
  • Current Id Max: 1.8 A
  • Current Temperature: 25°C
  • Device Marking: SI7922DN
  • Drain Source Voltage Vds: 100 V
  • External Depth: 5.15 mm
  • External Length / Height: 1.07 mm
  • External Width: 6.15 mm
  • Fall Time tf: 11 ns
  • Full Power Rating Temperature: 25°C
  • Junction Temperature Tj Max: 150°C
  • Junction Temperature Tj Min: -55°C
  • Junction to Case Thermal Resistance A: 4.3 °C/W
  • Module Configuration: Dual
  • Mounting Type: SMD
  • N-channel Gate Charge: 5.2nC
  • Number of Pins: 8
  • Number of Transistors: 2
  • On Resistance Rds(on): 162 MOhm
  • On State Resistance Max: 195 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: SOIC
  • Power Dissipation Pd: 1.3 W
  • Pulse Current Idm: 10 A
  • Rds(on) Test Voltage Vgs: 10 V
  • Rise Time: 11 ns
  • Threshold Voltage Vgs Typ: 3.5 V
  • Transistor Case Style: PowerPAK SO
  • Transistor Polarity: N Channel
  • Turn Off Time: 8 ns
  • Turn On Time: 7 ns
  • Voltage Vds Typ: 100 V
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Min: 2.5 V

RoHS: Yes