Datasheet IRF4905SPbF, IRF4905LPbF (Infineon)
| Fabricante | Infineon |
| Descripción | HEXFET Power MOSFET Features |
| Páginas / Página | 12 / 1 — Features. Description. Absolute Maximum Ratings. Parameter. Max. Units. … |
| Formato / tamaño de archivo | PDF / 370 Kb |
| Idioma del documento | Inglés |
Features. Description. Absolute Maximum Ratings. Parameter. Max. Units. Thermal Resistance. Typ
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PD - 97034 IRF4905SPbF IRF4905LPbF
Features
HEXFET® Power MOSFET O Advanced Process Technology D O Ultra Low On-Resistance VDSS = -55V O 150°C Operating Temperature O Fast Switching RDS(on) = 20mΩ O Repetitive Avalanche Allowed up to Tjmax G O Some Parameters Are Differrent from I IRF4905S D = -42A S O Lead-Free
Description
D D Features of this design are a 150°C junction oper- ating temperature, fast switching speed and im- proved repetitive avalanche rating . These features S S combine to make this design an extremely efficient D D G G and reliable device for use in a wide variety of other D2Pak TO-262 applications. IRF4905SPbF IRF4905LPbF
G D S
Gate Drain Source
Absolute Maximum Ratings Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) -70 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) -44 A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) -42 IDM Pulsed Drain Current c -280 PD @TC = 25°C Power Dissipation 170 W Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 20 V EAS (Thermally limited) Single Pulse Avalanche Energyd 140 mJ EAS (Tested ) Single Pulse Avalanche Energy Tested Value h 790 IAR Avalanche Currentc See Fig.12a, 12b, 15, 16 A EAR Repetitive Avalanche Energy g mJ TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw i 10 lbfyin (1.1Nym)
Thermal Resistance Parameter Typ. Max. Units
RθJC Junction-to-Case j ––– 0.75 RθJA Junction-to-Ambient (PCB Mount, steady state) ij ––– 40 www.irf.com 1 8/5/05
Features
HEXFET® Power MOSFET O Advanced Process Technology D O Ultra Low On-Resistance VDSS = -55V O 150°C Operating Temperature O Fast Switching RDS(on) = 20mΩ O Repetitive Avalanche Allowed up to Tjmax G O Some Parameters Are Differrent from I IRF4905S D = -42A S O Lead-Free
Description
D D Features of this design are a 150°C junction oper- ating temperature, fast switching speed and im- proved repetitive avalanche rating . These features S S combine to make this design an extremely efficient D D G G and reliable device for use in a wide variety of other D2Pak TO-262 applications. IRF4905SPbF IRF4905LPbF
G D S
Gate Drain Source
Absolute Maximum Ratings Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) -70 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) -44 A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) -42 IDM Pulsed Drain Current c -280 PD @TC = 25°C Power Dissipation 170 W Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 20 V EAS (Thermally limited) Single Pulse Avalanche Energyd 140 mJ EAS (Tested ) Single Pulse Avalanche Energy Tested Value h 790 IAR Avalanche Currentc See Fig.12a, 12b, 15, 16 A EAR Repetitive Avalanche Energy g mJ TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw i 10 lbfyin (1.1Nym)
Thermal Resistance Parameter Typ. Max. Units
RθJC Junction-to-Case j ––– 0.75 RθJA Junction-to-Ambient (PCB Mount, steady state) ij ––– 40 www.irf.com 1 8/5/05