Datasheet IRF4905SPbF, IRF4905LPbF (Infineon) - 5
| Fabricante | Infineon |
| Descripción | HEXFET Power MOSFET Features |
| Páginas / Página | 12 / 5 — Fig 9. Fig 10. Fig 11 |
| Formato / tamaño de archivo | PDF / 370 Kb |
| Idioma del documento | Inglés |
Fig 9. Fig 10. Fig 11
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IRF4905S/L 80 2.0 LIMITED BY PACKAGE ec I n D = -42A at V si GS = -10V s ) 60 e A( R t n n 1.5 e O r ) r e d u cr e C z u i 40 l n o i S a a - r o mr D t o - , N nia ( I D r 1.0 - 20 D , ) n o ( S D R 0 0.5 25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature (°C) TJ , Junction Temperature (°C)
Fig 9.
Maximum Drain Current Vs.
Fig 10.
Normalized On-Resistance Case Temperature Vs. Temperature 1 D = 0.50 ) CJh 0.20 t 0.1 Z ( 0.10 es R R R n 0.05 R 1 R 2 R 3 Ri (°C/W) 1 2 3 τi (sec) op τ s J τ τC 0.1165 0.000068 e J τ R 0.02 τ 1 τ τ l τ 2 3 1 τ τ 0.3734 0.002347 a 0.01 2 3 0.01 mr Ci= τi/Ri 0.2608 0.014811 e Ci τi/Ri h T Notes: SINGLE PULSE 1. Duty Factor D = t1/t2 ( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5
Fig 9.
Maximum Drain Current Vs.
Fig 10.
Normalized On-Resistance Case Temperature Vs. Temperature 1 D = 0.50 ) CJh 0.20 t 0.1 Z ( 0.10 es R R R n 0.05 R 1 R 2 R 3 Ri (°C/W) 1 2 3 τi (sec) op τ s J τ τC 0.1165 0.000068 e J τ R 0.02 τ 1 τ τ l τ 2 3 1 τ τ 0.3734 0.002347 a 0.01 2 3 0.01 mr Ci= τi/Ri 0.2608 0.014811 e Ci τi/Ri h T Notes: SINGLE PULSE 1. Duty Factor D = t1/t2 ( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5