Datasheet C3M0016120K (Wolfspeed) - 3
| Fabricante | Wolfspeed |
| Descripción | Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode |
| Páginas / Página | 12 / 3 — Reverse Diode Characteristics. Symbol. Parameter. Typ. Max. Unit. Test … |
| Formato / tamaño de archivo | PDF / 1.1 Mb |
| Idioma del documento | Inglés |
Reverse Diode Characteristics. Symbol. Parameter. Typ. Max. Unit. Test Conditions. Note. Thermal Characteristics
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Reverse Diode Characteristics
(T = 25˚C unless otherwise specified) C
Symbol Parameter Typ. Max. Unit Test Conditions Note
4.6 V V = -4 V, I = 37.5 A, T = 25 °C GS SD J V Fig. 8, SD Diode Forward Voltage 9, 10 4.2 V V = -4 V, I = 37.5 A, T = 175 °C GS SD J IS Continuous Diode Forward Current 112 A V = -4 V, T GS C = 25˚C Note 1 IS, pulse Diode pulse Current 250 A V = -4 V, pulse width t GS P limited by Tjmax Note 1 t Reverse Recover time 30 ns rr V = -4 V, I = 75 A, V = 800 V GS SD R Q Reverse Recovery Charge 1238 nC rr dif/dt = 4000 A/µs, T = 175 °C Note 1 J I Peak Reverse Recovery Current 64 A rrm t Reverse Recover time 27 ns rr V = -4 V, I = 75 A, V = 800 V GS SD R Q Reverse Recovery Charge 1261 nC rr dif/dt = 5500 A/µs, T = 175 °C Note 1 J I Peak Reverse Recovery Current 77 A rrm
Thermal Characteristics Symbol Parameter Typ. Unit Test Conditions Note
RθJC Thermal Resistance from Junction to Case 0.27 °C/W Fig. 21 RθJA Thermal Resistance From Junction to Ambient 40
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C3M0016120K Rev. -, 04-2019
(T = 25˚C unless otherwise specified) C
Symbol Parameter Typ. Max. Unit Test Conditions Note
4.6 V V = -4 V, I = 37.5 A, T = 25 °C GS SD J V Fig. 8, SD Diode Forward Voltage 9, 10 4.2 V V = -4 V, I = 37.5 A, T = 175 °C GS SD J IS Continuous Diode Forward Current 112 A V = -4 V, T GS C = 25˚C Note 1 IS, pulse Diode pulse Current 250 A V = -4 V, pulse width t GS P limited by Tjmax Note 1 t Reverse Recover time 30 ns rr V = -4 V, I = 75 A, V = 800 V GS SD R Q Reverse Recovery Charge 1238 nC rr dif/dt = 4000 A/µs, T = 175 °C Note 1 J I Peak Reverse Recovery Current 64 A rrm t Reverse Recover time 27 ns rr V = -4 V, I = 75 A, V = 800 V GS SD R Q Reverse Recovery Charge 1261 nC rr dif/dt = 5500 A/µs, T = 175 °C Note 1 J I Peak Reverse Recovery Current 77 A rrm
Thermal Characteristics Symbol Parameter Typ. Unit Test Conditions Note
RθJC Thermal Resistance from Junction to Case 0.27 °C/W Fig. 21 RθJA Thermal Resistance From Junction to Ambient 40
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C3M0016120K Rev. -, 04-2019