Datasheet IFR3205 (International Rectifier) - 3
| Fabricante | International Rectifier |
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 9 / 3 — Fig 1. Fig 2. Fig 3. Fig 4 |
| Formato / tamaño de archivo | PDF / 100 Kb |
| Idioma del documento | Inglés |
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IRF3205 1000 1000 VGS VGS TOP 15V 15V 10V 10V 8.0V 8.0V 7.0V TOP 7.0V 6.0V 6.0V 5.5V 5.5V 5.0V 5.0V BOTTOM4.5V BOTTOM 4.5V 100 100 4.5V 10 10 4.5V I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) D 20µs PULSE WIDTH 20µs PULSE WIDTH T = 25 J C ° T = 175 J C ° 1 1 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) DS V , Drain-to-Source Voltage (V) DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 1000 2.5 ID = 107A T = 25 C ° J 2.0 T = 175 C ° J 100 1.5 1.0 (Normalized) 10 0.5 I , Drain-to-Source Current (A) D V = 25V DS DS(on) V = 10V 20µs PULSE WIDTH R , Drain-to-Source On Resistance GS 1 0.0 4 6 8 10 12 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 V , Gate-to-Source Voltage (V) T , Junction Temperature ( C ° ) GS J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature www.irf.com 3
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 1000 2.5 ID = 107A T = 25 C ° J 2.0 T = 175 C ° J 100 1.5 1.0 (Normalized) 10 0.5 I , Drain-to-Source Current (A) D V = 25V DS DS(on) V = 10V 20µs PULSE WIDTH R , Drain-to-Source On Resistance GS 1 0.0 4 6 8 10 12 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 V , Gate-to-Source Voltage (V) T , Junction Temperature ( C ° ) GS J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature www.irf.com 3