Datasheet IFR3205 (International Rectifier) - 4
| Fabricante | International Rectifier |
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 9 / 4 — Fig 5. Fig 6. Fig 7. Fig 8 |
| Formato / tamaño de archivo | PDF / 100 Kb |
| Idioma del documento | Inglés |
Fig 5. Fig 6. Fig 7. Fig 8
Línea de modelo para esta hoja de datos
Versión de texto del documento
IRF3205 6000 16 VGS = 0V, f = 1 MHZ ID = 62A Ciss = Cgs + Cgd, Cds SHORTED V = 44V DS 14 5000 C V = 27V rss = Cgd DS V = 11V C DS oss = Cds + Cgd 12 4000 Ciss 10 3000 8 6 2000 C, Capacitance(pF) Coss 4 1000 GS Crss V , Gate-to-Source Voltage (V) 2 0 0 1 10 100 0 20 40 60 80 100 120 Q , Total Gate Charge (nC) G VDS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 10000 OPERATION IN THIS AREA LIMITED BY RDS(on) T = 175 C J ° 100 1000 10us 10 100 100us T = 25 C J ° I , Drain Current (A) D 1ms 1 10 SD 10ms I , Reverse Drain Current (A) T = 25 C ° C T = 175 C ° J V = 0 V GS Single Pulse 0.1 1 0.2 0.8 1.4 2.0 2.6 1 10 100 1000 V ,Source-to-Drain Voltage (V) V , Drain-to-Source Voltage (V) SD DS
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 www.irf.com
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 10000 OPERATION IN THIS AREA LIMITED BY RDS(on) T = 175 C J ° 100 1000 10us 10 100 100us T = 25 C J ° I , Drain Current (A) D 1ms 1 10 SD 10ms I , Reverse Drain Current (A) T = 25 C ° C T = 175 C ° J V = 0 V GS Single Pulse 0.1 1 0.2 0.8 1.4 2.0 2.6 1 10 100 1000 V ,Source-to-Drain Voltage (V) V , Drain-to-Source Voltage (V) SD DS
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 www.irf.com