Datasheet 2SC5200 (Toshiba) - 2

FabricanteToshiba
DescripciónSilicon NPN Triple Diffused Type
Páginas / Página5 / 2 — Electrical Characteristics (Ta = 25°C). Marking
Formato / tamaño de archivoPDF / 208 Kb
Idioma del documentoInglés

Electrical Characteristics (Ta = 25°C). Marking

Electrical Characteristics (Ta = 25°C) Marking

Línea de modelo para esta hoja de datos

Versión de texto del documento

2SC5200
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 230 V, IE = 0 A ― ― 5.0 μA Emitter cut-off current IEBO VEB = 5 V, IC = 0 A ― ― 5.0 μA Collector-emitter breakdown voltage V (BR) CEO IC = 50 mA, IB = 0 A 230 ― ― V hFE (1) VCE = 5 V, IC = 1 A 55 ― 160 DC current gain (Note) hFE (2) VCE = 5 V, IC = 7 A 35 60 ― Collector-emitter saturation voltage VCE (sat) IC = 8 A, IB = 0.8 A ― 0.4 3.0 V Base-emitter voltage VBE VCE = 5 V, IC = 7 A ― 1.0 1.5 V Transition frequency fT VCE = 5 V, IC = 1 A ― 30 ― MHz Collector output capacitance Cob VCB = 10 V, IE = 0 A, f = 1 MHz ― 200 ― pF Note: hFE (1) classification R: 55 to 110, O: 80 to 160
Marking
Part No. (or abbreviation code) TOSHIBA 2SC5200 Lot No. JAPAN Note 2 Characteristics Note: Printed only on devices manufactured in Japan indicator Note 2 : A line under a Lot No. identifies the indication of product Labels. [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2016-01-07