Datasheet 2SC5200 (Toshiba) - 3

FabricanteToshiba
DescripciónSilicon NPN Triple Diffused Type
Páginas / Página5 / 3 — 2SC5200. IC. –. VCE. IC. –. VBE. 20. 20. Common. emitter. Common. …
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Idioma del documentoInglés

2SC5200. IC. –. VCE. IC. –. VBE. 20. 20. Common. emitter. Common. emitter. Tc. =. 25°C. VCE. =. 5. V. ). 16. 800. ). 16. (A. 600. (A. 400. C. C. 300. I. 12. 250. I. 12. nt. nt. 200. re. re. 150. ur. ur. c. c. 100

2SC5200 IC – VCE IC – VBE 20 20 Common emitter Common emitter Tc = 25°C VCE = 5 V ) 16 800 ) 16 (A 600 (A 400 C C 300 I 12 250 I 12 nt nt 200 re re 150 ur ur c c 100

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2SC5200 IC – VCE IC – VBE 20 20 Common emitter Common emitter Tc = 25°C VCE = 5 V ) 16 800 ) 16 (A 600 (A 400 C C 300 I 12 250 I 12 nt nt 200 re re 150 ur ur c c 100 Tc = 100°C 8 8 tor tor lec IB = 10 mA lec ol 50 ol C C 4 40 4 30 25 20 −25 0 0 0 2 4 6 8 10 0 0.4 0.8 1.2 1.6 2.0 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) VCE (sat) – IC hFE – IC etag 3 300 ol Tc = 100°C v FE 1 100 ion ) h rat (V 25 n u at 0.3 30 gai −25 r s Tc = 100°C nt (sat) re itte CE 0.1 −25 ur 10 m V c -e C 25 tor D 0.03 Common emitter 3 Common emitter lec ol IC/IB = 10 VCE = 5 V C 0.01 1 0.01 0.1 1 10 100 0.01 0.1 1 10 100 Collector current IC (A) Collector current IC (A) Safe Operating Area 50 IC max (pulsed)* 30 1 ms* IC max (continuous) 10 ms* 10 DC operation Tc = 25°C ) 5 (A 100 ms* 3 I C nt re 1 ur c tor 0.5 lec ol C 0.3 *: Single nonrepetitive pulse Tc = 25°C 0.1 Curves must be derated linearly with increase in 0.05 VCEO max temperature. 0.03 3 10 30 100 300 1000 Collector-emitter voltage VCE (V) 3 2016-01-07