Datasheet GAN063-650WSA (Nexperia) - 5
| Fabricante | Nexperia |
| Descripción | 650 V, 50 mΩ Gallium Nitride (GaN) FET |
| Páginas / Página | 12 / 5 — Nexperia. GAN063-650WSA. 650 V, 50 mΩ Gal ium Nitride (GaN) FET. 10. … |
| Revisión | 27112019 |
| Formato / tamaño de archivo | PDF / 289 Kb |
| Idioma del documento | Inglés |
Nexperia. GAN063-650WSA. 650 V, 50 mΩ Gal ium Nitride (GaN) FET. 10. Characteristics Table 7. Characteristics. Symbol. Parameter
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Nexperia GAN063-650WSA 650 V, 50 mΩ Gal ium Nitride (GaN) FET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics
VGS(th) gate-source threshold ID = 1 mA; VDS=VGS; Tj = 25 °C 3.4 3.9 4.5 V voltage ID = 1 mA; VDS=VGS; Tj = 175 °C; Fig. 9 2.2 - - V ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 9 - - 5.2 V IDSS drain leakage current VDS = 650 V; VGS = 0 V; Tj = 25 °C - 2 25 µA VDS = 650 V; VGS = 0 V; Tj = 175 °C - 25 - µA IGSS gate leakage current VGS = -20 V; VDS = 0 V; Tj = 25 °C - 10 100 nA VGS = 20 V; VDS = 0 V; Tj = 25 °C - 10 100 nA RDSon drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C - 50 60 mΩ resistance VGS = 10 V; ID = 25 A; Tj = 175 °C; - 120 - mΩ Fig. 10 RG gate resistance f = 1 MHz - 2.3 - Ω
Dynamic characteristics
QG(tot) total gate charge ID = 25 A; VDS = 400 V; VGS = 10 V; - 15 - nC Q T GS gate-source charge j = 25 °C - 6 - nC QGD gate-drain charge - 4 - nC Ciss input capacitance VDS = 400 V; VGS = 0 V; f = 1 MHz; - 1000 - pF C T oss output capacitance j = 25 °C; Fig. 11 - 130 - pF Crss reverse transfer - 8 - pF capacitance Co(er) ef ective output 0 V ≤ VDS ≤ 400 V; VGS = 0 V; - 190 - pF capacitance, energy Tj = 25 °C; Fig. 12 related Co(tr) ef ective output 0 V ≤ VDS ≤ 400 V; VGS = 0 V; - 310 - pF capacitance, time Tj = 25 °C related td(on) turn-on delay time VDS = 400 V; RL = 16 Ω; VGS = 12 V; - 57 - ns t R r rise time G(ext) = 40 Ω - 10 - ns td(of ) turn-of delay time - 88 - ns tf fall time - 11 - ns Qoss output charge VGS = 0 V; VDS = 400 V - 125 - nC
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 13 - 1.9 - V IS = 12.5 A; VGS = 0 V; Tj = 25 °C - 1.35 - V trr reverse recovery time IS = 25 A; dIS/dt = -1000 A/µs; - 54 - ns Q V r recovered charge GS = 0 V; VDS = 400 V; Fig. 14 - 125 - nC GAN063-650WSA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. Al rights reserved
Product data sheet 27 November 2019 5 / 12
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Application information 12. Package outline 13. Legal information Contents
Nexperia GAN063-650WSA 650 V, 50 mΩ Gal ium Nitride (GaN) FET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics
VGS(th) gate-source threshold ID = 1 mA; VDS=VGS; Tj = 25 °C 3.4 3.9 4.5 V voltage ID = 1 mA; VDS=VGS; Tj = 175 °C; Fig. 9 2.2 - - V ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 9 - - 5.2 V IDSS drain leakage current VDS = 650 V; VGS = 0 V; Tj = 25 °C - 2 25 µA VDS = 650 V; VGS = 0 V; Tj = 175 °C - 25 - µA IGSS gate leakage current VGS = -20 V; VDS = 0 V; Tj = 25 °C - 10 100 nA VGS = 20 V; VDS = 0 V; Tj = 25 °C - 10 100 nA RDSon drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C - 50 60 mΩ resistance VGS = 10 V; ID = 25 A; Tj = 175 °C; - 120 - mΩ Fig. 10 RG gate resistance f = 1 MHz - 2.3 - Ω
Dynamic characteristics
QG(tot) total gate charge ID = 25 A; VDS = 400 V; VGS = 10 V; - 15 - nC Q T GS gate-source charge j = 25 °C - 6 - nC QGD gate-drain charge - 4 - nC Ciss input capacitance VDS = 400 V; VGS = 0 V; f = 1 MHz; - 1000 - pF C T oss output capacitance j = 25 °C; Fig. 11 - 130 - pF Crss reverse transfer - 8 - pF capacitance Co(er) ef ective output 0 V ≤ VDS ≤ 400 V; VGS = 0 V; - 190 - pF capacitance, energy Tj = 25 °C; Fig. 12 related Co(tr) ef ective output 0 V ≤ VDS ≤ 400 V; VGS = 0 V; - 310 - pF capacitance, time Tj = 25 °C related td(on) turn-on delay time VDS = 400 V; RL = 16 Ω; VGS = 12 V; - 57 - ns t R r rise time G(ext) = 40 Ω - 10 - ns td(of ) turn-of delay time - 88 - ns tf fall time - 11 - ns Qoss output charge VGS = 0 V; VDS = 400 V - 125 - nC
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 13 - 1.9 - V IS = 12.5 A; VGS = 0 V; Tj = 25 °C - 1.35 - V trr reverse recovery time IS = 25 A; dIS/dt = -1000 A/µs; - 54 - ns Q V r recovered charge GS = 0 V; VDS = 400 V; Fig. 14 - 125 - nC GAN063-650WSA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. Al rights reserved
Product data sheet 27 November 2019 5 / 12
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Application information 12. Package outline 13. Legal information Contents