Datasheet HAT2169H (Renesas) - 7

HAT2169H (mJ) Reverse Drain Current vs.
Source to Drain Voltage 80 Repetitive Avalanche Energy EAR Reverse Drain Current IDR (A) 100 10 V
VGS = 0 5V
60 40 20
Pulse Test
0 0.4 0.8 1.2 1.6 Source to Drain Voltage 2.0 Maximum Avalanche Energy vs.
Channel Temperature Derating
100
IAP = 30 A
VDD = 15 V
duty < 0.1 %
Rg ≥ 50 Ω 80 60 40 20
0
25 50 75 100 125 150 Channel Temperature Tch (°C) VSD (V) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1 D=1
0.5 0.3
0.2 0.1 θch -c(t) = γs (t) • θch -c
θch -c = 4.17°C/ W, Tc = 25°C 0.1 0.05 PDM 0.02
1
0.0 0.03 0.01
10 µ D= lse t
ho PW
T PW
T pu 1s 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) Avalanche Test Circuit VDS
Monitor Avalanche Waveform EAR = L 1
2 L • IAP2 • VDSS
VDSS – VDD IAP
Monitor V(BR)DSS
IAP Rg D. U. T VDS VDD ID
Vin
15 V 50 Ω
0 Rev.4.00 Sep 20, 2005 page 5 of 7 VDD