Datasheet DN3545 (Microchip) - 4

FabricanteMicrochip
DescripciónN-Channel Depletion-Mode Vertical DMOS FET
Páginas / Página14 / 4 — DN3545. 2.0. TYPICAL PERFORMANCE CURVES. Note:. (amperes). I D. (volts). …
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DN3545. 2.0. TYPICAL PERFORMANCE CURVES. Note:. (amperes). I D. (volts). FIGURE 2-1:. FIGURE 2-4:. (siemens). (watts) D. I (amperes). T (OC)

DN3545 2.0 TYPICAL PERFORMANCE CURVES Note: (amperes) I D (volts) FIGURE 2-1: FIGURE 2-4: (siemens) (watts) D I (amperes) T (OC)

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DN3545 2.0 TYPICAL PERFORMANCE CURVES Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g. outside specified power supply range) and therefore outside the warranted range. 0.7 V V = +2V GS = +2.0V 0.6 GS +1.0V 0.6 1.0V 0V 0V 0.5 -0.5V 0.5 -0.5V 0.4 0.4 -0.8V 0.3 -0.8V
(amperes)
0.3
(amperes) I D I D
-1.0V -1.0V 0.2 0.2 0.1 0.1 -1.5V -1.5V 0 0 0 50 100 150 200 250 300 350 400 450 0 2 4 6 8 10
V (volts) V (volts) DS DS FIGURE 2-1:
Output Characteristics.
FIGURE 2-4:
Saturation Characteristics. 0.8 2.0 V = 10V DS SOT-89 T = -55OC A 0.6 1.5 T = 25OC A 0.4 1.0
(siemens) (watts) D FS P
TO-92
G
T = 125OC A 0.2 0.5 0 0 0 0.1 0.2 0.3 0.4 0 25 50 75 100 125 150
I (amperes) D T (OC) A FIGURE 2-2:
Transconductance vs. Drain
FIGURE 2-5:
Power Dissipation vs. Current. Ambient Temperature. 1.0 1.0 TO-92 (Pulsed) SOT-89 SOT-89 (Pulsed) SOT-89 (DC) TA = 25OC 0.8 PD = 1.6W 0.1 TO-92 (DC) 0.6
(amperes) I D
0.4 0.01 0.2 TO-92 Thermal Resistance (normalized) T = 25OC C T = 25OC P = 1.0W A D 0.001 1 10 100 1000 0 0.001 0.01 0.1 1 10
V (volts) DS t (seconds) P FIGURE 2-3:
Maximum Rated Safe
FIGURE 2-6:
Thermal Response Operating Area. Characteristics. DS20005438A-page 4  2018 Microchip Technology Inc. Document Outline 1.0 Electrical Characteristics 2.0 Typical Performance Curves FIGURE 2-1: Output Characteristics. FIGURE 2-2: Transconductance vs. Drain Current. FIGURE 2-3: Maximum Rated Safe Operating Area. FIGURE 2-4: Saturation Characteristics. FIGURE 2-5: Power Dissipation vs. Ambient Temperature. FIGURE 2-6: Thermal Response Characteristics. FIGURE 2-7: BVDSS Variation with Temperature. FIGURE 2-8: Transfer Characteristics. FIGURE 2-9: Capacitance vs. Drain-to- Source Voltage. FIGURE 2-10: On-Resistance vs. Drain Current. FIGURE 2-11: VGS(th) and RDS(ON) Variation with Temperature. FIGURE 2-12: Gate Drive Dynamic Characteristics. 3.0 Pin Description TABLE 3-1: 3-lead TO-92 Pin Function Table TABLE 3-2: 3-lead SOT-89 Pin Function Table 4.0 Functional Description FIGURE 4-1: Switching Waveforms and Test Circuit. TABLE 4-1: Product Summary 5.0 Packaging Information 5.1 Package Marking Information AMERICAS Corporate Office Atlanta Austin, TX Boston Chicago Dallas Detroit Houston, TX Indianapolis Los Angeles Raleigh, NC New York, NY San Jose, CA Canada - Toronto ASIA/PACIFIC Australia - Sydney China - Beijing China - Chengdu China - Chongqing China - Dongguan China - Guangzhou China - Hangzhou China - Hong Kong SAR China - Nanjing China - Qingdao China - Shanghai China - Shenyang China - Shenzhen China - Suzhou China - Wuhan China - Xian China - Xiamen China - Zhuhai ASIA/PACIFIC India - Bangalore India - New Delhi India - Pune Japan - Osaka Japan - Tokyo Korea - Daegu Korea - Seoul Malaysia - Kuala Lumpur Malaysia - Penang Philippines - Manila Singapore Taiwan - Hsin Chu Taiwan - Kaohsiung Taiwan - Taipei Thailand - Bangkok Vietnam - Ho Chi Minh EUROPE Austria - Wels Denmark - Copenhagen Finland - Espoo France - Paris Germany - Garching Germany - Haan Germany - Heilbronn Germany - Karlsruhe Germany - Munich Germany - Rosenheim Israel - Ra’anana Italy - Milan Italy - Padova Netherlands - Drunen Norway - Trondheim Poland - Warsaw Romania - Bucharest Spain - Madrid Sweden - Gothenberg Sweden - Stockholm UK - Wokingham