Datasheet LND150, LND250 (Microchip) - 3

FabricanteMicrochip
DescripciónN-Channel Depletion-Mode DMOS FETs
Páginas / Página16 / 3 — LND150/LND250. AC ELECTRICAL CHARACTERISTICS. Electrical Specifications:. …
Formato / tamaño de archivoPDF / 1.3 Mb
Idioma del documentoInglés

LND150/LND250. AC ELECTRICAL CHARACTERISTICS. Electrical Specifications:. Parameter. Sym. Min. Typ. Max. Unit. Conditions

LND150/LND250 AC ELECTRICAL CHARACTERISTICS Electrical Specifications: Parameter Sym Min Typ Max Unit Conditions

Línea de modelo para esta hoja de datos

Versión de texto del documento

link to page 3 link to page 3 link to page 3 link to page 3
LND150/LND250 AC ELECTRICAL CHARACTERISTICS Electrical Specifications:
TA = 25°C unless otherwise specified. Specification is obtained by characterization and is not 100% tested.
Parameter Sym. Min. Typ. Max. Unit Conditions
Forward Transconductance GFS 1 2 — mmho VDS = 0V, ID = 1 mA Input Capacitance CISS — 7.5 10 pF VGS = –10V, Common Source Output Capacitance C V OSS — 2 3.5 pF DS = 25V, f = 1 MHz Reverse Transfer Capacitance CRSS — 0.5 1 pF Turn-On Delay Time td(ON) — 0.09 — ns VDD = 25V, Rise Time tr — 0.45 — ns ID = 1 mA, Turn-Off Delay Time td(OFF) — 0.1 — ns RGEN = 25Ω Fall Time tf — 1.3 — ns
DIODE PARAMETER
Diode Forward Voltage Drop VSD — — 0.9 V VGS = –10V, ISD = 1 mA (
Note 1
) Reverse Recovery Time trr — 200 — ns VGS = –10V, ISD = 1 mA
Note 1:
Unless otherwise stated, all DC parameters are 100% tested at +25°C. Pulse test: 300 µs pulse, 2% duty cycle.
TEMPERATURE SPECIFICATIONS Parameter Sym. Min. Typ. Max. Unit Conditions TEMPERATURE RANGE
Operating Ambient Temperature TA –55 — +150 °C Storage Temperature TS –55 — +150 °C
PACKAGE THERMAL RESISTANCE
3-lead TO-92 JA — 132 — °C/W 3-lead SOT-23 JA — 203 — °C/W 3-lead SOT-89 JA — 133 — °C/W
THERMAL CHARACTERISTICS ID (Note 1) ID Power Dissipation I I DRM Package (Continuous) (Pulsed) at T DR A = 25°C (Note 1 ) (mA) (mA) (A) (W) (A)
3-lead TO-92 30 30 0.74 30 30 3-lead SOT-23 13 30 0.36 13 30 3-lead SOT-89 30 30 1.6 (
Note 2
) 30 30
Note 1:
ID (continuous) is limited by maximum rated TJ.
2:
TA = 25°C. Mounted on an FR4 Board, 25 mm x 25 mm x 1.57 mm.  2018 Microchip Technology Inc. DS20005454A-page 3 Document Outline N-Channel Depletion-Mode DMOS FETs Features Applications General Description Package Types 1.0 Electrical Characteristics Absolute Maximum Ratings† DC Electrical Characteristics AC Electrical Characteristics Temperature Specifications Thermal Characteristics 2.0 Typical Performance Curves FIGURE 2-1: Output Characteristics. FIGURE 2-2: Transconductance vs. Drain Current. FIGURE 2-3: Maximum Rated Safe Operating Area. FIGURE 2-4: Saturation Characteristics. FIGURE 2-5: Power Dissipation vs. Ambient Temperature. FIGURE 2-6: Thermal Response Characteristics. FIGURE 2-7: BVDSS Variation with Temperature. FIGURE 2-8: Transfer Characteristics. FIGURE 2-9: Capacitance vs. Drain-to- Source Voltage. FIGURE 2-10: Drain Current vs. RSOURCE. FIGURE 2-11: VGS(OFF) and RDS Variation with Temperature. FIGURE 2-12: Gate Drive Dynamic Characteristics. 3.0 Pin Description TABLE 3-1: TO-92 Pin Function Table TABLE 3-2: SOT-23 Pin Function Table TABLE 3-3: SOT-89 Pin Function Table 4.0 Functional Description FIGURE 4-1: Switching Waveforms and Test Circuit. TABLE 4-1: Product Summary 5.0 Packaging Information 5.1 Package Marking Information Appendix A: Revision History Revision A (August 2018) Product Identification System Worldwide Sales and Service