Datasheet T835H-8G (STMicroelectronics) - 6

FabricanteSTMicroelectronics
Descripción8 A - 800 V - 150°C 8H-Triac in D2PAK
Páginas / Página12 / 6 — 360°. T835H-8G. Characteristics (curves). Figure 13. Relative variation …
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360°. T835H-8G. Characteristics (curves). Figure 13. Relative variation of static dV/dt immunity

360° T835H-8G Characteristics (curves) Figure 13 Relative variation of static dV/dt immunity

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360° T835H-8G Characteristics (curves) Figure 13. Relative variation of static dV/dt immunity Figure 14. Relative variation of critical rate of decrease of versus junction temperature main current versus junction temperature
dV/dt [Tj] / dV/dt [Tj = 150 °C] (dl/dt)c [Tj] / (dl/dt)c [Tj = 150 °C] 4 14 V 12 D = VR = 536 V 3 10 8 2 6 4 1 2 Tj(°C) T 0 j(°C) 0 25 50 75 100 125 150 25 50 75 100 125 150
DS13570
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Rev 2 page 6/12
α Document Outline 1 Characteristics 1.1 Characteristics (curves) 2 Package information 2.1 D²PAK package information 3 Ordering information Revision history