Datasheet IRF7425PbF (Infineon)

FabricanteInfineon
DescripciónHEXFET Power MOSFET
Páginas / Página9 / 1 — IRF7425PbF. VDS. -20. RDS(on) max. 8.2. g (typical). -15. Features. …
Formato / tamaño de archivoPDF / 197 Kb
Idioma del documentoInglés

IRF7425PbF. VDS. -20. RDS(on) max. 8.2. g (typical). -15. Features. Benefits. Standard Pack. Base Part Number. Package Type

Datasheet IRF7425PbF Infineon

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IRF7425PbF
HEXFET® Power MOSFET
VDS -20 V
A 1 8
RDS(on) max
S D
8.2
(@VGS = -4.5V) 2 7
m
S D Ω
RDS(on) max 13
3 6 S D (@VGS = -2.5V) 4 5
Q
G D
g (typical) 87 nC ID -15 A
Top View SO-8 (@TA = 25°C)
Features Benefits
Industry-standard pinout SO-8 Package ⇒ Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1,Consumer qualification Increased Reliability
Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity
Tube/Bulk 95 IRF7425PbF IRF7425PbF SO-8 Tape and Reel 4000 IRF7425TRPbF
Absolute Maximum Ratings Parameter Max. Units
VDS Drain- Source Voltage -20 V ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -15 ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -12 A IDM Pulsed Drain Current  -60 PD @TA = 25°C Power Dissipation ƒ 2.5 W PD @TA = 70°C Power Dissipation ƒ 1.6 Linear Derating Factor 20 mW/°C VGS Gate-to-Source Voltage ± 12 V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance Parameter Max. Units
RθJA Maximum Junction-to-Ambientƒ 50 °C/W 1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 29, 2013