Datasheet IRF7425PbF (Infineon) - 4
| Fabricante | Infineon |
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 9 / 4 — Fig 5. Fig 6. Fig 7. Fig 8 |
| Formato / tamaño de archivo | PDF / 197 Kb |
| Idioma del documento | Inglés |
Fig 5. Fig 6. Fig 7. Fig 8
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IRF7425PbF 12000 8 VGS = 0V, f = 1MHz ID = -15A C = C + C C SHORTED iss gs gd , ds V =-16V DS C = C rss gd V =-10V DS 10000 C = C + C oss ds gd 6 C 8000 iss 6000 4 4000 C, Capacitance (pF) 2 Coss GS 2000 -V , Gate-to-Source Voltage (V) Crss 0 0 1 10 100 0 40 80 120 160 -V , Drain-to-Source Voltage (V) Q , Total Gate Charge (nC) DS G
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) 10 100 T = 150 C J ° 100us 1ms 1 10 D-I , Drain Current (A)I , Drain Current (A) T = 25 C J ° 10ms -I , Reverse Drain Current (A) SD T = 25 C ° A T = 150 C ° V = 0 V J GS Single Pulse 0.1 1 0.2 0.4 0.6 0.8 1.0 0.1 1 10 100 -V ,Source-to-Drain Voltage (V) SD -V , Drain-to-Source Voltage (V) DS
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 29, 2013
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) 10 100 T = 150 C J ° 100us 1ms 1 10 D-I , Drain Current (A)I , Drain Current (A) T = 25 C J ° 10ms -I , Reverse Drain Current (A) SD T = 25 C ° A T = 150 C ° V = 0 V J GS Single Pulse 0.1 1 0.2 0.4 0.6 0.8 1.0 0.1 1 10 100 -V ,Source-to-Drain Voltage (V) SD -V , Drain-to-Source Voltage (V) DS
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 29, 2013