Datasheet NTH4L015N065SC1 (ON Semiconductor)
| Fabricante | ON Semiconductor |
| Descripción | MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 12 mW, 142 A |
| Páginas / Página | 8 / 1 — Features. www.onsemi.com. V(BR)DSS. RDS(ON) MAX. ID MAX. Typical … |
| Formato / tamaño de archivo | PDF / 280 Kb |
| Idioma del documento | Inglés |
Features. www.onsemi.com. V(BR)DSS. RDS(ON) MAX. ID MAX. Typical Applications. MAXIMUM RATINGS. N−CHANNEL MOSFET. Parameter. Symbol. Value
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link to page 1 link to page 1 link to page 1 link to page 1 link to page 1 link to page 1 MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 12 m
W
, 142 A NTH4L015N065SC1
Features
• Typ. RDS(on) = 12 m @ VGS = 18 V Typ. R
www.onsemi.com
DS(on) = 15 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 283 nC) • High Speed Switching with Low Capacitance (Coss = 430 pF)
V(BR)DSS RDS(ON) MAX ID MAX
• 100% Avalanche Tested 650 V 18 m @ 18 V 142 A • TJ = 175°C • These Devices are Pb−Free and are RoHS Compliant D
Typical Applications
• SMPS (Switching Mode Power Supplies) • Solar Inverters • UPS (Uninterruptable Power Supplies) G • S1: Driver Source Energy Storages S2: Power Source S1 S2
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
N−CHANNEL MOSFET Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 650 V Gate−to−Source Voltage VGS −8/+22 V Recommended Operation Values TC < 175°C VGSop −5/+18 V of Gate−to−Source Voltage Continuous Drain Steady TC = 25°C ID 142 A D Current (Note 1) State S2S1 G Power Dissipation PD 500 W
TO247−4L
(Note 1)
CASE 340CJ
Continuous Drain Steady TC = 100°C ID 100 A Current (Note 1) State
MARKING DIAGRAM
Power Dissipation PD 250 W (Note 1) Pulsed Drain Current TC = 25°C IDM 483 A (Note 2) H4L015 Single Pulse Surge TA = 25°C, tp = 10 s, IDSC 798 A 065SC1 Drain Current Capability RG = 4.7 AYWWZZ Operating Junction and Storage Temperature TJ, Tstg −55 to °C Range +175 Source Current (Body Diode) IS 114 A Single Pulse Drain−to−Source Avalanche E H4L015065SC1 = Specific Device Code AS 84 mJ Energy (I A = Assembly Location L(pk) = 13 A, L = 1 mH) (Note 3) Y = Year Maximum Lead Temperature for Soldering TL 300 °C WW = Work Week (1/8″ from case for 5 s) ZZ = Lot Traceability Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be
ORDERING INFORMATION
assumed, damage may occur and reliability may be affected. 1. The entire application environment impacts the thermal resistance values shown,
Device Package Shipping
they are not constants and are only valid for the particular conditions noted. 2. Repetitive rating, limited by max junction temperature. NTH4L015N065SC1 TO247−4L 30 Units / 3. EAS of 84 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 13 A, Tube VDD = 50 V, VGS = 18 V. © Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
February, 2021 − Rev. 0 NTH4L015N065SC1/D
W
, 142 A NTH4L015N065SC1
Features
• Typ. RDS(on) = 12 m @ VGS = 18 V Typ. R
www.onsemi.com
DS(on) = 15 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 283 nC) • High Speed Switching with Low Capacitance (Coss = 430 pF)
V(BR)DSS RDS(ON) MAX ID MAX
• 100% Avalanche Tested 650 V 18 m @ 18 V 142 A • TJ = 175°C • These Devices are Pb−Free and are RoHS Compliant D
Typical Applications
• SMPS (Switching Mode Power Supplies) • Solar Inverters • UPS (Uninterruptable Power Supplies) G • S1: Driver Source Energy Storages S2: Power Source S1 S2
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
N−CHANNEL MOSFET Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 650 V Gate−to−Source Voltage VGS −8/+22 V Recommended Operation Values TC < 175°C VGSop −5/+18 V of Gate−to−Source Voltage Continuous Drain Steady TC = 25°C ID 142 A D Current (Note 1) State S2S1 G Power Dissipation PD 500 W
TO247−4L
(Note 1)
CASE 340CJ
Continuous Drain Steady TC = 100°C ID 100 A Current (Note 1) State
MARKING DIAGRAM
Power Dissipation PD 250 W (Note 1) Pulsed Drain Current TC = 25°C IDM 483 A (Note 2) H4L015 Single Pulse Surge TA = 25°C, tp = 10 s, IDSC 798 A 065SC1 Drain Current Capability RG = 4.7 AYWWZZ Operating Junction and Storage Temperature TJ, Tstg −55 to °C Range +175 Source Current (Body Diode) IS 114 A Single Pulse Drain−to−Source Avalanche E H4L015065SC1 = Specific Device Code AS 84 mJ Energy (I A = Assembly Location L(pk) = 13 A, L = 1 mH) (Note 3) Y = Year Maximum Lead Temperature for Soldering TL 300 °C WW = Work Week (1/8″ from case for 5 s) ZZ = Lot Traceability Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be
ORDERING INFORMATION
assumed, damage may occur and reliability may be affected. 1. The entire application environment impacts the thermal resistance values shown,
Device Package Shipping
they are not constants and are only valid for the particular conditions noted. 2. Repetitive rating, limited by max junction temperature. NTH4L015N065SC1 TO247−4L 30 Units / 3. EAS of 84 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 13 A, Tube VDD = 50 V, VGS = 18 V. © Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
February, 2021 − Rev. 0 NTH4L015N065SC1/D