Datasheet HMC902LP3E (Analog Devices) - 4
| Fabricante | Analog Devices |
| Descripción | 5 GHz to 11 GHz GaAs, pHEMT, MMIC, Low Noise Amplifier |
| Páginas / Página | 13 / 4 — HMC902LP3E. Data Sheet. ABSOLUTE MAXIMUM RATINGS Table 2. Parameter. … |
| Revisión | E |
| Formato / tamaño de archivo | PDF / 413 Kb |
| Idioma del documento | Inglés |
HMC902LP3E. Data Sheet. ABSOLUTE MAXIMUM RATINGS Table 2. Parameter. Rating. ESD CAUTION
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HMC902LP3E Data Sheet ABSOLUTE MAXIMUM RATINGS Table 2.
Stresses at or above those listed under Absolute Maximum
Parameter Rating
Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these Drain Bias Voltage 4.5 V or any other conditions above those indicated in the operational Radio Frequency (RF) Input Power 10 dBm section of this specification is not implied. Operation beyond Gate Bias Voltages the maximum operating conditions for extended periods may VGG1 −2 V to +0.2 V affect product reliability. VGG2 −2 V to +0.2 V Channel Temperature 150°C
ESD CAUTION
Continuous Power Dissipation, PDISS 0.45 W (T = 85°C, Derate 7 mW/°C Above 85°C) Thermal Resistance (Channel to Ground Pad) 143.8°C/W Storage Temperature −65°C to +150°C Operating Temperature −40°C to +85°C Electrostatic Discharge (ESD) Sensitivity Human Body Model (HBM) Class 1A, Passed 250 V Rev. E | Page 4 of 13 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION EVALUATION PRINTED CIRCUIT BOARD (PCB) APPLICATION CIRCUITS OUTLINE DIMENSIONS ORDERING GUIDE
Stresses at or above those listed under Absolute Maximum
Parameter Rating
Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these Drain Bias Voltage 4.5 V or any other conditions above those indicated in the operational Radio Frequency (RF) Input Power 10 dBm section of this specification is not implied. Operation beyond Gate Bias Voltages the maximum operating conditions for extended periods may VGG1 −2 V to +0.2 V affect product reliability. VGG2 −2 V to +0.2 V Channel Temperature 150°C
ESD CAUTION
Continuous Power Dissipation, PDISS 0.45 W (T = 85°C, Derate 7 mW/°C Above 85°C) Thermal Resistance (Channel to Ground Pad) 143.8°C/W Storage Temperature −65°C to +150°C Operating Temperature −40°C to +85°C Electrostatic Discharge (ESD) Sensitivity Human Body Model (HBM) Class 1A, Passed 250 V Rev. E | Page 4 of 13 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION EVALUATION PRINTED CIRCUIT BOARD (PCB) APPLICATION CIRCUITS OUTLINE DIMENSIONS ORDERING GUIDE