Datasheet HMC462 (Analog Devices) - 3

FabricanteAnalog Devices
DescripciónGaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz
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HMC462. GaAs pHEMT MMIC. LOW NOISE AMPLIFIER, 2 - 20 GHz. P1dB vs. Temperature. Psat vs. Temperature. P1dB vs. Vdd. Psat vs. Vdd

HMC462 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz P1dB vs Temperature Psat vs Temperature P1dB vs Vdd Psat vs Vdd

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HMC462
v02.0213
GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz P1dB vs. Temperature Psat vs. Temperature
22 22 ip 20 20 h 18 18 16 16 C (dBm) 14 (dBm) 14 - P1dB 12 Psat 12 s r 10 10 8 8 ie 6 6 2 4 6 8 10 12 14 16 18 20 22 2 4 6 8 10 12 14 16 18 20 22 lif FREQUENCY (GHz) FREQUENCY (GHz) p +25 C +85 C -55 C +25 C +85 C -55 C m A e
P1dB vs. Vdd Psat vs. Vdd
is 22 22 o 20 20 N 18 18 16 16 w (dBm) 14 (dBm) 14 P1dB 12 Psat 12 lo 10 10 - 8 8 s 6 6 r 2 4 6 8 10 12 14 16 18 20 22 2 4 6 8 10 12 14 16 18 20 22 ie FREQUENCY (GHz) FREQUENCY (GHz) +4V +5V +6V +4V +5V +6V lif p
Output IP3 vs. Temperature Output IP3 vs. Vdd
m
@ Pout = 4 dBm Tone @ Pout = 4 dBm Tone
A 30 30 27 27 ) 24 24 (dBm (dBm IP3 21 IP3 21 18 18 15 15 2 4 6 8 10 12 14 16 18 20 22 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) FREQUENCY (GHz) +25 C +85 C -55 C +4V +5V +6V Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd hone e r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o t niltie n .c e ao t m
3
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