Datasheet HMC590LP5E (Analog Devices)

FabricanteAnalog Devices
DescripciónGaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz
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HMC590LP5E. GaAs pHEMT MMIC 1 WATT. POWER AMPLIFIER, 6.0 - 9.5 GHz. Typical Applications. Features. Functional Diagram

Datasheet HMC590LP5E Analog Devices

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HMC590LP5E
v04.1219
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Typical Applications Features
The HMC590LP5E is ideal for use as a power ampli- Saturated Output Power: +31.5 dBm @ 23% PAE T fier for: Output IP3: +40 dBm M • Point-to-Point Radios Gain: 21 dB • Point-to-Multi-Point Radios DC Supply: +7V @ 820 mA S - S • Test Equipment & Sensors 50 Ohm Matched Input/Output R • Military End-Use QFN Leadless SMT Packages, 25 mm2 IE • Space LIF P
Functional Diagram General Description
M The HMC590LP5E are high dynamic range GaAs pHEMT MMIC 1 Watt Power Amplifiers which R A E operate from 6 to 9.5 GHz. The amplifier pro- vides 21 dB of gain, +31 dBm of saturated power, W and 23% PAE from a +7V supply. This 50 Ohm O matched amplifier does not require any external components and the RF I/Os are DC blocked for ro- bust operation. For applications which require op- R & P timum OIP3, Idd should be set for 520 mA, to yield A +40 dBm OIP3. For applications which require E optimum output P1dB, Idd should be set for 820 mA, to yield +30 dBm Output P1dB. LIN
Electrical Specifications, T = +25° C, Vdd = +7V, Idd = 820 mA[1] A
Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 6 - 8 6 - 9.5 GHz Gain 18 21 18 21 dB Gain Variation Over Temperature 0.05 0.05 dB/ °C Input Return Loss 15 12 dB Output Return Loss 11 10 dB Output Power for 1 dB 27 30 27.5 30.5 dBm Compression (P1dB) Saturated Output Power (Psat) 30.5 31 dBm Output Third Order Intercept (IP3)[2] 40 40 dBm Supply Current (Idd) 820 820 mA [1] Adjust Vgg between -2 to 0V to achieve Idd= 820 mA typical. [2] Measurement taken at 7V @ 520mA, Pin/Tone = -15 dBm I F nf o or r p mati roic n e fu , d rnis e h leiv d e b ry y , a Analn o d t g D o p evic leac s i e o s bel rid ev e e rs d t : A o b n e a a lco c g D urat e e a v n ic d re elsi, I abl n e c . H , O owe n vee T r, n e o chn F o o lo r p g ri y W ce a , d y el, P ive.O ry . B , anox 9 d t 10 o pl 6 a , N c o e orrw de o r o s d, M : Anal A 0 o 2 g D 0 e 6 vi 2 c - e 9 s 10 , I 6 nc., responsibility is assumed by Analog Devices for it P s u h se on , no er f: 78 or an 1- y i 3 nfr2in9g-e4 m 7 e 0 nt 0 • O s of paterd nt e s or o r ot n h leir rights of third parties that may result from its use. Specifications subject to change without notice. No ne a O t w n w e Te w ch.a n n ol a o lgog. y Wcao y m , P.O. Box 9106, Norwood, MA 02062-9106
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license is granted by implication or otherwise under an A y pa p te p n li t o ca r p t atio enn S t rig u ht pp s o o f A rnta: P lo h g D o e n vi e ce : 1 s. -80 P 0 ho -A ne NA : 7 L 81 O -3 G 2 - 9-D4700 • Order online at www.analog.com Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Performance Characteristics Broadband Gain & Return Loss Gain vs. Temperature Input Return Loss vs. Temperature Output Return Loss vs. Temperature P1dB vs. Temperature Psat vs. Temperature P1dB vs. Current Psat vs. Current Output IP3 vs. Temperature 7V @ 520 mA, Pin/Tone = -15 dBm Power Compression @ 8 GHz, 7V @ 820 mA Output IM3, 7V @ 820 mA Gain & Power vs. Supply Current @ 8 GHz Gain & Power vs. Supply Voltage @ 8 GHz Reverse Isolation vs. Temperature, 7V @ 820 mA Power Dissipation Absolute Maximum Ratings Typical Supply Current vs. Vdd Outline Drawing Package Information Pin Descriptions Application Circuit Evaluation PCB List of Materials for Evaluation PCB 115927