Datasheet C2M0080170P (Wolfspeed) - 4
| Fabricante | Wolfspeed |
| Descripción | Silicon Carbide Power MOSFET 1700 V 40 A 80 mΩ |
| Páginas / Página | 10 / 4 — Typical Performance. 100. Conditions:. VDS = 20 V. tp < 200 µs. VGS = … |
| Formato / tamaño de archivo | PDF / 1.2 Mb |
| Idioma del documento | Inglés |
Typical Performance. 100. Conditions:. VDS = 20 V. tp < 200 µs. VGS = -5 V. -10. (A). GS = 0 V. -20. , I DS. J = 25 °C. rent. -30. ur 50. -40. ce C
Línea de modelo para esta hoja de datos
Versión de texto del documento
Typical Performance 100 -7 -6 -5 -4 -3 -2 -1 0 Conditions: 0 90 VDS = 20 V tp < 200 µs VGS = -5 V 80 -10 (A) (A) V 70 GS = 0 V -20 , I DS T , I DS 60 J = 25 °C rent -30 rent ur 50 ur -40 ce C ce C VGS = -2 V 40 TJ = 150 °C TJ = -55 °C -50 in-Sour 30 in-Sour Dra -60 20 Dra -70 10 Conditions: 0 T -80 J = -55°C 0 2 4 6 8 10 12 14 16 18 20 tp < 200 µs -90 Gate-Source Voltage, VGS (V) Drain-Source Voltage VDS (V)
Figure 7. Transfer Characteristic for Figure 8. Body Diode Characteristic at -55 ºC Various Junction Temperatures
-7 -6 -5 -4 -3 -2 -1 0 -7 -6 -5 -4 -3 -2 -1 0 0 0 VGS = -5 V -10 -10 V (A) GS = -5 V V (A) VGS = 0 V GS = 0 V -20 -20 , I DS , I DS -30 rent -30 rent ur V VGS = -2 V GS = -2 V ur -40 ce C -40 ce C -50 -50 in-Sour in-Sour -60 Dra -60 Dra -70 -70 Conditions: Conditions: T -80 T -80 J = 25°C J = 150°C tp < 200 µs tp < 200 µs -90 -90 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V)
Figure 9. Body Diode Characteristic at 25 ºC Figure 10. Body Diode Characteristic at 150 ºC
3.0 25 Conditons Conditions: VGS = VDS IDS = 20 A 2.5 IDS = 5 mA 20 IGS = 50 mA VDS = 1200 V TJ = 25 °C 2.0 (V) (V) 15 GS 1.5 10 oltage, V th oltage, V ld V ce V 1.0 5 esho Thr 0.5 Gate-Sour 0 0.0 -5 -50 -25 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Junction Temperature TJ (°C) Gate Charge, QG (nC)
Figure 11. Threshold Voltage vs. Temperature Figure 12. Gate Charge Characteristics
4
C2M0080170P Rev. A, 05-2018
Figure 7. Transfer Characteristic for Figure 8. Body Diode Characteristic at -55 ºC Various Junction Temperatures
-7 -6 -5 -4 -3 -2 -1 0 -7 -6 -5 -4 -3 -2 -1 0 0 0 VGS = -5 V -10 -10 V (A) GS = -5 V V (A) VGS = 0 V GS = 0 V -20 -20 , I DS , I DS -30 rent -30 rent ur V VGS = -2 V GS = -2 V ur -40 ce C -40 ce C -50 -50 in-Sour in-Sour -60 Dra -60 Dra -70 -70 Conditions: Conditions: T -80 T -80 J = 25°C J = 150°C tp < 200 µs tp < 200 µs -90 -90 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V)
Figure 9. Body Diode Characteristic at 25 ºC Figure 10. Body Diode Characteristic at 150 ºC
3.0 25 Conditons Conditions: VGS = VDS IDS = 20 A 2.5 IDS = 5 mA 20 IGS = 50 mA VDS = 1200 V TJ = 25 °C 2.0 (V) (V) 15 GS 1.5 10 oltage, V th oltage, V ld V ce V 1.0 5 esho Thr 0.5 Gate-Sour 0 0.0 -5 -50 -25 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Junction Temperature TJ (°C) Gate Charge, QG (nC)
Figure 11. Threshold Voltage vs. Temperature Figure 12. Gate Charge Characteristics
4
C2M0080170P Rev. A, 05-2018