Datasheet C2M0080170P (Wolfspeed) - 3
| Fabricante | Wolfspeed |
| Descripción | Silicon Carbide Power MOSFET 1700 V 40 A 80 mΩ |
| Páginas / Página | 10 / 3 — Typical Performance. 100. Conditions:. VGS = 18V. GS = 18V. J = -55 °C. … |
| Formato / tamaño de archivo | PDF / 1.2 Mb |
| Idioma del documento | Inglés |
Typical Performance. 100. Conditions:. VGS = 18V. GS = 18V. J = -55 °C. GS = 16V. VGS = 14V. TJ = 25 °C. GS = 20V. tp = < 200 µs. GS = 12V
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Typical Performance 100 100 Conditions: Conditions: T VGS = 18V V V V GS = 18V V J = -55 °C GS = 16V VGS = 14V V TJ = 25 °C GS = 16V GS = 20V VGS = 14V tp = < 200 µs GS = 20V tp = < 200 µs V 80 80 GS = 12V (A) (A) VGS = 12V , I DS , I DS 60 60 rent rent VGS = 10V ur ur ce C ce C 40 40 VGS = 10V in-Sour in-Sour Dra 20 Dra 20 0 0 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)
Figure 1. Output Characteristics TJ = -55 ºC Figure 2. Output Characteristics TJ = 25 ºC
100 3.0 Conditions: Conditions: TJ = 150 °C I tp = < 200 µs DS = 28 A 2.5 VGS = 20 V 80 VGS = 16V V t GS = 18V p < 200 µs (A) VGS = 14V V .) GS = 20V VGS = 12V , I DS V (P.U 2.0 GS = 10V 60 On rent ur 1.5 ce C 40 ance, R DS 1.0 in-Sour Dra 20 On Resist 0.5 0 0.0 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 -50 -25 0 25 50 75 100 125 150 Drain-Source Voltage, V Junction Temperature, T DS (V) J (°C)
Figure 3. Output Characteristics TJ = 150 ºC Figure 4. Normalized On-Resistance vs. Temperature
320 200 Conditions: Conditions: V 180 I 280 GS = 20 V DS = 28 A t t p < 200 µs p < 200 µs 160 ) 240 ) 140 hms hms 200 (mO 120 (mO V T GS = 12 V On J = 150 °C 160 On 100 DS VGS = 14 V 120 80 ance, R DS ance, R VGS = 16 V T 60 80 J = 25 °C VGS = 18 V V 40 GS = 20 V On Resist T 40 J = -55 °C On Resist 20 0 0 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 Drain-Source Current, IDS (A) Junction Temperature, TJ (°C)
Figure 5. On-Resistance vs. Drain Current Figure 6. On-Resistance vs. Temperature For Various Temperatures For Various Gate Voltage
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C2M0080170P Rev. A, 05-2018
Figure 1. Output Characteristics TJ = -55 ºC Figure 2. Output Characteristics TJ = 25 ºC
100 3.0 Conditions: Conditions: TJ = 150 °C I tp = < 200 µs DS = 28 A 2.5 VGS = 20 V 80 VGS = 16V V t GS = 18V p < 200 µs (A) VGS = 14V V .) GS = 20V VGS = 12V , I DS V (P.U 2.0 GS = 10V 60 On rent ur 1.5 ce C 40 ance, R DS 1.0 in-Sour Dra 20 On Resist 0.5 0 0.0 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 -50 -25 0 25 50 75 100 125 150 Drain-Source Voltage, V Junction Temperature, T DS (V) J (°C)
Figure 3. Output Characteristics TJ = 150 ºC Figure 4. Normalized On-Resistance vs. Temperature
320 200 Conditions: Conditions: V 180 I 280 GS = 20 V DS = 28 A t t p < 200 µs p < 200 µs 160 ) 240 ) 140 hms hms 200 (mO 120 (mO V T GS = 12 V On J = 150 °C 160 On 100 DS VGS = 14 V 120 80 ance, R DS ance, R VGS = 16 V T 60 80 J = 25 °C VGS = 18 V V 40 GS = 20 V On Resist T 40 J = -55 °C On Resist 20 0 0 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 Drain-Source Current, IDS (A) Junction Temperature, TJ (°C)
Figure 5. On-Resistance vs. Drain Current Figure 6. On-Resistance vs. Temperature For Various Temperatures For Various Gate Voltage
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C2M0080170P Rev. A, 05-2018