Datasheet UF3SC065030B7S (UnitedSiC) - 8

FabricanteUnitedSiC
Descripción650V-27mW SiC FET
Páginas / Página10 / 8 — 10,000. 70. C. 60. iss. ). A. 1,000. (. pF. I. D. 50. (. t,. C. n. ,. C. …
Formato / tamaño de archivoPDF / 440 Kb
Idioma del documentoInglés

10,000. 70. C. 60. iss. ). A. 1,000. (. pF. I. D. 50. (. t,. C. n. ,. C. e. e. oss. rr. 40. nc. 100. Cu. ita. n. 30. ac. ai. p. r. D. Ca. C. 20. 10. D. C. 10. rss. 1. 0. 0. 100. 200. 300. 400. 500. 600. -75. -50. -25. 0. 25. 50. 75. 100

10,000 70 C 60 iss ) A 1,000 ( pF I D 50 ( t, C n , C e e oss rr 40 nc 100 Cu ita n 30 ac ai p r D Ca C 20 10 D C 10 rss 1 0 0 100 200 300 400 500 600 -75 -50 -25 0 25 50 75 100

Línea de modelo para esta hoja de datos

Versión de texto del documento

10,000 70 C 60 iss ) A 1,000 ( pF I D 50 ( t, C n , C e e oss rr 40 nc 100 Cu ita n 30 ac ai p r D Ca C 20 10 D C 10 rss 1 0 0 100 200 300 400 500 600 -75 -50 -25 0 25 50 75 100 125 150 175 Drain-Source Voltage, VDS (V) Case Temperature, TC (°C) Figure 13. Typical capacitances at f = 100kHz and VGS Figure 14. DC drain current derating = 0V 250 1 ) W( 200 /W C ot °( P t ,n JC 0.1 io 150 Z q , D = 0.5 at e ip nc D = 0.3 ss a i 100 d D = 0.1 D r D = 0.05 e mpe 0.01 I w l o a D = 0.02 P 50 mre D = 0.01 Th Single Pulse 0 0.001 -75 -50 -25 0 25 50 75 100 125 150 175 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 Case Temperature, TC (°C) Pulse Time, tp (s) Figure 15. Total power dissipation Figure 16. Maximum transient thermal impedance Datasheet: UF3SC065030B7S Rev. A, December 2020 8