Datasheet UF3SC065030B7S (UnitedSiC) - 9

FabricanteUnitedSiC
Descripción650V-27mW SiC FET
Páginas / Página10 / 9 — 600. VDS. =. 400V,. VGS. =. -5V/12V. 100. R. 500. G_ON. =. 8.5W,. RG_OFF. …
Formato / tamaño de archivoPDF / 440 Kb
Idioma del documentoInglés

600. VDS. =. 400V,. VGS. =. -5V/12V. 100. R. 500. G_ON. =. 8.5W,. RG_OFF. =. 22W. 1ms. J). FWD:. same. device. with. VGS. =. (. m. -5V,. R. ). y. G. =. 22W. A. gr. 400. (. e. Etot. I. D. 10. n. ,. 10ms. E. Eon. nt

600 VDS = 400V, VGS = -5V/12V 100 R 500 G_ON = 8.5W, RG_OFF = 22W 1ms J) FWD: same device with VGS = ( m -5V, R ) y G = 22W A gr 400 ( e Etot I D 10 n , 10ms E Eon nt

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600 VDS = 400V, VGS = -5V/12V 100 R 500 G_ON = 8.5W, RG_OFF = 22W 1ms J) FWD: same device with VGS = ( m -5V, R ) y G = 22W A gr 400 ( e Etot I D 10 n , 10ms E Eon nt g 300 Eoff e n rr hi 100ms Cu itc 200 n 1 Sw air 1ms D DC 10ms 100 0.1 0 1 10 100 1000 0 10 20 30 40 50 60 Drain-Source Voltage, V Drain Current, I DS (V) D (A) Figure 17. Safe operation area at TC = 25°C, D = 0, Figure 18. Clamped inductive switching energy vs. Parameter t drain current at T p J = 25°C 500 300 VDS = 400V, VGS = -5V/12V 250 ID = 40A, TJ =25°C J) 400 J) m FWD: same device with ( m( F V F 200 GS = -5V E ON , 300 E O y , g y r g e r 150 n e E n 200 E on V ff O 100 n- DS = 400V, VGS = -5V/12V r ID = 40A, TJ = 25°C n-r Tu 100 FWD: same device with VGS = - 5V, Tu 50 RG = 22W 0 0 0 5 10 15 20 25 0 20 40 60 80 100 Total External RG, RG,EXT_ON (W) Total External RG, RG,EXT_OFF (W) Figure 19. Clamped inductive switching turn-on Figure 20. Clamped inductive switching turn-off energy vs. RG,EXT_ON energy vs. RG,EXT_OFF Datasheet: UF3SC065030B7S Rev. A, December 2020 9