Datasheet UF3SC120040B7S (UnitedSiC) - 4

FabricanteUnitedSiC
Descripción1200V-35mW SiC FET
Páginas / Página10 / 4 — Typical. Performance. -. Dynamic. Value. Parameter. Symbol. Test. …
Formato / tamaño de archivoPDF / 438 Kb
Idioma del documentoInglés

Typical. Performance. -. Dynamic. Value. Parameter. Symbol. Test. Conditions. Units. Min. Typ. Max. Input. capacitance. Ciss. 1500. V. Output. capacitance. C

Typical Performance - Dynamic Value Parameter Symbol Test Conditions Units Min Typ Max Input capacitance Ciss 1500 V Output capacitance C

Línea de modelo para esta hoja de datos

Versión de texto del documento

Typical Performance - Dynamic Value Parameter Symbol Test Conditions Units Min Typ Max Input capacitance Ciss 1500 V Output capacitance C DS=100V, VGS=0V oss 210 pF f=100kHz Reverse transfer capacitance Crss 1.7 Effective output capacitance, energy V C DS=0V to 800V, oss(er) 112 pF related VGS=0V Effective output capacitance, time V C DS=0V to 800V, oss(tr) 280 pF related VGS=0V COSS stored energy Eoss VDS=800V, VGS=0V 35.6 mJ Total gate charge QG 43 V Gate-drain charge Q DS=800V, ID=35A, GD 11 nC V Gate-source charge Q GS = -5V to 12V GS 19 Turn-on delay time td(on) 40 VDS=800V, ID=35A, Gate Rise time tr Driver =-5V to +12V, 13 ns Turn-off delay time t Turn-on R d(off) G,EXT=8.5W, 47 Fall time t Turn-off RG,EXT=22W f 8 Inductive Load, Turn-on energy EON 731 FWD: same device with Turn-off energy EOFF VGS = -5V, RG = 22W, 130 mJ Total switching energy E TJ=25°C TOTAL 861 Turn-on delay time td(on) 37 VDS=800V, ID=35A, Gate Rise time tr Driver =-5V to +12V, 12 ns Turn-off delay time t Turn-on R d(off) G,EXT=8.5W, 47 Turn-off R Fall time t G,EXT=22W f 7 Inductive Load, Turn-on energy EON 670 FWD: same device with Turn-off energy E V OFF GS = -5V, RG = 22W, 129 mJ Total switching energy E TJ=150°C TOTAL 799 Datasheet: UF3SC120040B7S Rev. A, December 2020 4