Datasheet UF3SC120040B7S (UnitedSiC) - 6

FabricanteUnitedSiC
Descripción1200V-35mW SiC FET
Páginas / Página10 / 6 — 150. 120. Tj. =. 175°C. Tj. =. -55°C. ). 125. 100. W. Tj. =. 25°C. Tj. =. …
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Idioma del documentoInglés

150. 120. Tj. =. 175°C. Tj. =. -55°C. ). 125. 100. W. Tj. =. 25°C. Tj. =. 25°C. (m. Tj. =. -. 55°C. ). Tj. =. 175°C. n). A(. o. 100. 80. (S. I. ,. D. R. D. ,. nt. e. 75. c. er. 60. r. ant. Cu. is. s. 50. n. 40. e. ai. R. r. -. D. 25. On. 20. 0

150 120 Tj = 175°C Tj = -55°C ) 125 100 W Tj = 25°C Tj = 25°C (m Tj = - 55°C ) Tj = 175°C n) A( o 100 80 (S I , D R D , nt e 75 c er 60 r ant Cu is s 50 n 40 e ai R r - D 25 On 20 0

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150 120 Tj = 175°C Tj = -55°C ) 125 100 W Tj = 25°C Tj = 25°C (m Tj = - 55°C ) Tj = 175°C n) A( o 100 80 (S I , D R D , nt e 75 c er 60 r ant Cu is s 50 n 40 e ai R r - D 25 On 20 0 0 0 20 40 60 80 100 120 0 1 2 3 4 5 6 7 8 9 10 Drain Current, ID (A) Gate-Source Voltage, VGS (V) Figure 5. Typical drain-source on-resistances at VGS = Figure 6. Typical transfer characteristics at VDS = 5V 12V 6 20 ) 5 V V ( 15 V th V GS , 4 , e e g g 10 lta lta o 3 o V V d ec ol r 5 h 2 s ou e S r - Th te 0 1 Ga 0 -5 -100 -50 0 50 100 150 200 0 10 20 30 40 50 60 Junction Temperature, TJ (°C) Gate Charge, QG (nC) Figure 7. Threshold voltage vs. junction temperature Figure 8. Typical gate charge at VDS = 800V and ID = at VDS = 5V and ID = 10mA 35A Datasheet: UF3SC120040B7S Rev. A, December 2020 6