Datasheet TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) (ON Semiconductor) - 2
| Fabricante | ON Semiconductor |
| Descripción | Plastic Medium-Power Complementary Silicon Transistors |
| Páginas / Página | 8 / 2 — TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP). MAXIMUM … |
| Formato / tamaño de archivo | PDF / 157 Kb |
| Idioma del documento | Inglés |
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP). MAXIMUM RATINGS. TIP110,. TIP111,. TIP112,. Rating. Symbol. TIP115. TIP116
Línea de modelo para esta hoja de datos
Versión de texto del documento
link to page 2 link to page 2
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) MAXIMUM RATINGS TIP110, TIP111, TIP112, Rating Symbol TIP115 TIP116 TIP117 Unit
Collector−Emitter Voltage VCEO 60 80 100 Vdc Collector−Base Voltage VCB 60 80 100 Vdc Emitter−Base Voltage VEB 5.0 Vdc Collector Current − Continuous IC 2.0 Adc − Peak 4.0 Base Current IB 50 mAdc Total Power Dissipation @ TC = 25°C PD 50 W Derate above 25°C 0.4 W/°C Total Power Dissipation @ TA = 25°C PD 2.0 W Derate above 25°C 0.016 W/°C Unclamped Inductive Load Energy − Figure 13 E 25 mJ Operating and Storage Junction TJ, Tstg –65 to +150 °C
THERMAL CHARACTERISTICS Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 2.5 °C/W Thermal Resistance, Junction−to−Ambient RqJA 62.5 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1) VCEO(sus) Vdc (IC = 30 mAdc, IB = 0) TIP110, TIP115 60 − TIP111, TIP116 80 − TIP112, TIP117 100 − Collector Cutoff Current ICEO mAdc (VCE = 30 Vdc, IB = 0) TIP110, TIP115 − 2.0 (VCE = 40 Vdc, IB = 0) TIP111, TIP116 − 2.0 (VCE = 50 Vdc, IB = 0) TIP112 ,TIP117 − 2.0 Collector Cutoff Current ICBO mAdc (VCB = 60 Vdc, IE = 0) TIP110, TIP115 − 1.0 (VCB = 80 Vdc, IE = 0) TIP111, TIP116 − 1.0 (VCB = 100 Vdc, IE = 0) TIP112, TIP117 − 1.0 Emitter Cutoff Current IEBO − 2.0 mAdc (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
(Note 1) DC Current Gain hFE − (IC = 1.0 Adc, VCE = 4.0 Vdc) 1000 − (IC = 2.0 Adc, VCE = 4.0 Vdc) 500 − Collector−Emitter Saturation Voltage (IC = 2.0 Adc, IB = 8.0 mAdc) VCE(sat) − 2.5 Vdc Base−Emitter On Voltage (IC = 2.0 Adc, VCE = 4.0 Vdc) VBE(on) − 2.8 Vdc
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain (IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz) hfe 25 − − Output Capacitance Cob pF (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) TIP115, TIP116, TIP117 − 200 TIP110, TIP111, TIP112 − 100 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
www.onsemi.com 2
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) MAXIMUM RATINGS TIP110, TIP111, TIP112, Rating Symbol TIP115 TIP116 TIP117 Unit
Collector−Emitter Voltage VCEO 60 80 100 Vdc Collector−Base Voltage VCB 60 80 100 Vdc Emitter−Base Voltage VEB 5.0 Vdc Collector Current − Continuous IC 2.0 Adc − Peak 4.0 Base Current IB 50 mAdc Total Power Dissipation @ TC = 25°C PD 50 W Derate above 25°C 0.4 W/°C Total Power Dissipation @ TA = 25°C PD 2.0 W Derate above 25°C 0.016 W/°C Unclamped Inductive Load Energy − Figure 13 E 25 mJ Operating and Storage Junction TJ, Tstg –65 to +150 °C
THERMAL CHARACTERISTICS Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 2.5 °C/W Thermal Resistance, Junction−to−Ambient RqJA 62.5 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1) VCEO(sus) Vdc (IC = 30 mAdc, IB = 0) TIP110, TIP115 60 − TIP111, TIP116 80 − TIP112, TIP117 100 − Collector Cutoff Current ICEO mAdc (VCE = 30 Vdc, IB = 0) TIP110, TIP115 − 2.0 (VCE = 40 Vdc, IB = 0) TIP111, TIP116 − 2.0 (VCE = 50 Vdc, IB = 0) TIP112 ,TIP117 − 2.0 Collector Cutoff Current ICBO mAdc (VCB = 60 Vdc, IE = 0) TIP110, TIP115 − 1.0 (VCB = 80 Vdc, IE = 0) TIP111, TIP116 − 1.0 (VCB = 100 Vdc, IE = 0) TIP112, TIP117 − 1.0 Emitter Cutoff Current IEBO − 2.0 mAdc (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
(Note 1) DC Current Gain hFE − (IC = 1.0 Adc, VCE = 4.0 Vdc) 1000 − (IC = 2.0 Adc, VCE = 4.0 Vdc) 500 − Collector−Emitter Saturation Voltage (IC = 2.0 Adc, IB = 8.0 mAdc) VCE(sat) − 2.5 Vdc Base−Emitter On Voltage (IC = 2.0 Adc, VCE = 4.0 Vdc) VBE(on) − 2.8 Vdc
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain (IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz) hfe 25 − − Output Capacitance Cob pF (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) TIP115, TIP116, TIP117 − 200 TIP110, TIP111, TIP112 − 100 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
www.onsemi.com 2