Datasheet HUF75652G3 (ON Semiconductor) - 3

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HUF75652G3 ELECTRICAL SPECIFICATIONS
TC = 25°C unless otherwise noted
SYMBOL PARAMETER TEST CONDITIONS MIN TYP MAX UNITS OFF STATE SPECIFICATIONS
BVDSS Drain to Source Breakdown Voltage ID = 250 mA, VGS = 0 V (Figure 11) 100 − − V IDSS Zero Gate Voltage Drain Current VDS = 95 V, VGS = 0 V − − 1 mA VDS = 90 V, VGS = 0 V, TC = 150°C − − 250 mA IGSS Gate to Source Leakage Current VGS = ±20 V − − ±100 nA
ON STATE SPECIFICATIONS
VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250 mA (Figure 10) 2 − 4 V rDS(ON) Drain to Source On Resistance ID = 75 A, VGS = 10 V (Figure 9) − 0.0067 0.008 W
THERMAL SPECIFICATIONS
RθJC Thermal Resistance Junction to Case TO−247 − − 0.29 °C/W RθJA Thermal Resistance Junction to Ambient − − 30 °C/W
SWITCHING SPECIFICATIONS
(VGS = 10 V) tON Turn−On Time V − − 320 ns DD = 50 V, ID ≅ 75 A, VGS = 10 V, RGS = 2.0 W td(ON) Turn−On Delay Time − 18.5 − ns tr Rise Time − 195 − ns td(OFF) Turn−Off Delay Time − 80 − ns tf Fall Time − 190 − ns tOFF Turn−Off Time − − 410 ns
GATE CHARGE SPECIFICATIONS
Qg(TOT) Total Gate Charge VGS = 0 V to 20 V VDD = 50 V, ID = 75 A, − 393 475 nC Ig(REF) = 1.0 mA Qg(10) Gate Charge at 10 V VGS = 0 V to 10 V − 211 255 nC (Figures 13) Qg(TH) Threshold Gate Charge VGS = 0 V to 2 V − 14 16.5 nC Qgs Gate to Source Gate Charge − 26 − nC Qgd Gate to Drain “Miller” Charge − 74 − nC
CAPACITANCE SPECIFICATIONS
CISS Input Capacitance VDS = 25 V, VGS = 0 V, − 7585 − pF f = 1 MHz COSS Output Capacitance − 2345 − pF (Figure 12) CRSS Reverse Transfer Capacitance − 630 − pF
SOURCE TO DRAIN DIODE SPECIFICATIONS SYMBOL PARAMETER TEST CONDITIONS MIN TYP MAX UNITS
VSD Source to Drain Diode Voltage ISD = 75 A − − 1.25 V ISD = 35 A − − 1.00 V trr Reverse Recovery Time ISD = 75 A, dISD/dt = 100 A/ms − − 150 ns QRR Reverse Recovered Charge ISD = 75 A, dISD/dt = 100 A/ms − − 490 nC
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