Datasheet HUF75652G3 (ON Semiconductor) - 6
| Fabricante | ON Semiconductor |
| Descripción | MOSFET – Power, N-Channel, Ultrafet 100 V, 75 A, 8 mW |
| Páginas / Página | 12 / 6 — HUF75652G3. TYPICAL PERFORMANCE CURVES. 1.2. 20000. ID = 250 mA. CISS = … |
| Formato / tamaño de archivo | PDF / 553 Kb |
| Idioma del documento | Inglés |
HUF75652G3. TYPICAL PERFORMANCE CURVES. 1.2. 20000. ID = 250 mA. CISS = CGS + CGD. 10000. CRSS = CGD. 1.1. 1000. 1.0. COSS. CDS + CGD
Línea de modelo para esta hoja de datos
Versión de texto del documento
HUF75652G3 TYPICAL PERFORMANCE CURVES
(continued)
1.2 20000 ID = 250 mA CISS = CGS + CGD 10000 CRSS = CGD 1.1 1000 1.0 COSS
^
CDS + CGD BREAKDOWN VOLTAGE C, CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE VGS = 0V, f = 1MHz 0.9 100 −80 −40 0 40 80 120 160 200 0.1 1.0 10 100 TJ, JUNCTION TEMPERATURE (
5
C) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 11. NORMALIZED DRAIN TO SOURCE Figure 12. CAPACITANCE vs DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION VOLTAGE TEMPERATURE 10 VDD = 50V 8 6 4 WAVEFORMS IN 2 DESCENDING ORDER: , GATE TO SOURCE VOLTAGE (V) ID = 75A I V GS D = 35A 0 0 50 100 150 200 250 Qg, GATE CHARGE (nC) Figure 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT www.onsemi.com 6
(continued)
1.2 20000 ID = 250 mA CISS = CGS + CGD 10000 CRSS = CGD 1.1 1000 1.0 COSS
^
CDS + CGD BREAKDOWN VOLTAGE C, CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE VGS = 0V, f = 1MHz 0.9 100 −80 −40 0 40 80 120 160 200 0.1 1.0 10 100 TJ, JUNCTION TEMPERATURE (
5
C) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 11. NORMALIZED DRAIN TO SOURCE Figure 12. CAPACITANCE vs DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION VOLTAGE TEMPERATURE 10 VDD = 50V 8 6 4 WAVEFORMS IN 2 DESCENDING ORDER: , GATE TO SOURCE VOLTAGE (V) ID = 75A I V GS D = 35A 0 0 50 100 150 200 250 Qg, GATE CHARGE (nC) Figure 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT www.onsemi.com 6