DMP2160UWQMaximum Ratings (@TA = +25°C, unless otherwise specified.) CharacteristicSymbolValueUnits Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±10 V T -1.5 Drain Current (Note 6) Steady State A = +25°C ID A T -1.2 A = +70°C Pulsed Drain Current IDM -10 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) CharacteristicSymbolValueUnits Total Power Dissipation (Note 6) PD 350 mW Thermal Resistance, Junction to Ambient RθJA 360 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) CharacteristicSymbolMinTypMaxUnitTest ConditionOFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS -20 V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current IDSS 1 μA VDS = -20V, VGS = 0V ±100 V Gate-Source Leakage GS = 8V, VDS = 0V IGSS nA ±800 VGS = 10V, VDS = 0V ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS(th) -0.4 -0.6 -0.9 V VDS = VGS, ID = -250μA 75 100 V Static Drain-Source On-Resistance GS = -4.5V, ID = -1.5A RDS(ON) mΩ 90 120 VGS = -2.5V, ID = -1.2A Forward Transconductance gFS — 4 — S VDS =-10V, ID = -1.5A Diode Forward Voltage (Note 8) VSD — -1.0 V VGS = 0V, IS = -1.0A DYNAMIC CHARACTERISTICS (Note 8)