Datasheet DMP2160UWQ (Diodes) - 3
| Fabricante | Diodes |
| Descripción | P-Channel Enhancement Mode Mosfet |
| Páginas / Página | 6 / 3 — DMP2160UWQ. www.diodes.com |
| Formato / tamaño de archivo | PDF / 486 Kb |
| Idioma del documento | Inglés |
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DMP2160UWQ
10 10 V = 3.0V V = -5V DS GS V = 3.0V 8 GS 8 ) V = 3.0V A A GS ( T T V = 2.5V GS N N E E 6 V = 2.0V GS R 6 R R R U U C C N N I I A A 4 4 R R V = 1.5V D D GS , I D I D - T = 150°C 2 2 A T = 125°C A T = 85°C A T = 25°C A T = -55°C 0 A 0 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 V , DRAIN-SOURCE VOLTAGE (V) DS -V , GATE SOURCE VOLTAGE (V) GS Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics 1.6 1,200 f = 1MHz ) V = 0V GS D 1,000 1.4 E E ZI ) C L V = -2.5V GS F R A I = -2A p D ( U M 800 O R E O 1.2 S V = -4.5V C - GS N N N I = -4.5A I ( D A A E TI 600 C R C C iss D N A , A P ) 1.0 T N A O S C ( I , 400 S S D E C R R- N 0.8 O 200 Coss Crss 0.6 0 -50 -25 0 25 50 75 100 125 150 0 4 8 12 16 20 T , JUNCTION TEMPERATURE (°C) V , DRAIN-SOURCE VOLTAGE (V) J DS Fig. 3 On-Resistance Variation with Temperature Fig. 4 Typical Capacitance 1 10 ) V( 0.9 E G ) 8 A T A 0.8 ( L O T V N E D 0.7 R L 6 R O U H C S 0.6 I = 1mA D E E R C H R T 0.5 4 T = 25°C U A E O I = 250µA T D S A , G 0.4 I S , - ) H 2 T( S 0.3 GV- 0.2 0 -50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 T , AMBIENT TEMPERATURE (°C) -V , SOURCE-DRAIN VOLTAGE (V) A SD Fig. 5 Gate Threshold Variation vs. Ambient Temperature Fig. 6 Diode Forward Voltage vs. Current DMP2160UWQ 3 of 6 December 2017 Document number: DS40105 Rev. 2 - 2
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10 10 V = 3.0V V = -5V DS GS V = 3.0V 8 GS 8 ) V = 3.0V A A GS ( T T V = 2.5V GS N N E E 6 V = 2.0V GS R 6 R R R U U C C N N I I A A 4 4 R R V = 1.5V D D GS , I D I D - T = 150°C 2 2 A T = 125°C A T = 85°C A T = 25°C A T = -55°C 0 A 0 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 V , DRAIN-SOURCE VOLTAGE (V) DS -V , GATE SOURCE VOLTAGE (V) GS Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics 1.6 1,200 f = 1MHz ) V = 0V GS D 1,000 1.4 E E ZI ) C L V = -2.5V GS F R A I = -2A p D ( U M 800 O R E O 1.2 S V = -4.5V C - GS N N N I = -4.5A I ( D A A E TI 600 C R C C iss D N A , A P ) 1.0 T N A O S C ( I , 400 S S D E C R R- N 0.8 O 200 Coss Crss 0.6 0 -50 -25 0 25 50 75 100 125 150 0 4 8 12 16 20 T , JUNCTION TEMPERATURE (°C) V , DRAIN-SOURCE VOLTAGE (V) J DS Fig. 3 On-Resistance Variation with Temperature Fig. 4 Typical Capacitance 1 10 ) V( 0.9 E G ) 8 A T A 0.8 ( L O T V N E D 0.7 R L 6 R O U H C S 0.6 I = 1mA D E E R C H R T 0.5 4 T = 25°C U A E O I = 250µA T D S A , G 0.4 I S , - ) H 2 T( S 0.3 GV- 0.2 0 -50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 T , AMBIENT TEMPERATURE (°C) -V , SOURCE-DRAIN VOLTAGE (V) A SD Fig. 5 Gate Threshold Variation vs. Ambient Temperature Fig. 6 Diode Forward Voltage vs. Current DMP2160UWQ 3 of 6 December 2017 Document number: DS40105 Rev. 2 - 2
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© Diodes Incorporated