Datasheet RUC002N05 (Rohm) - 2
| Fabricante | Rohm |
| Descripción | Nch 50V 200mA Small Signal MOSFET |
| Páginas / Página | 14 / 2 — RUC002N05. Thermal resistance. Electrical characteristics (Ta = 25°C). … |
| Formato / tamaño de archivo | PDF / 3.0 Mb |
| Idioma del documento | Inglés |
RUC002N05. Thermal resistance. Electrical characteristics (Ta = 25°C). 20240905 - Rev.004
Línea de modelo para esta hoja de datos
Versión de texto del documento
RUC002N05
Datasheet l
Thermal resistance
Values Parameter Symbol Unit Min. Typ. Max. R *2 thJA - - 357 ℃/W Thermal resistance, junction - ambient R *3 thJA - - 625 ℃/W l
Electrical characteristics (Ta = 25°C)
Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V voltage (BR)DSS VGS = 0V, ID = 1mA 50 - - V Breakdown voltage ΔV(BR)DSS ID = 1mA - 53.7 - mV/℃ temperature coefficient ΔTj referenced to 25℃ Zero gate voltage I drain current DSS VDS = 50V, VGS = 0V - - 1 μA Gate - Source leakage current IGSS VGS = ±8V, VDS = 0V - - ±10 μA Gate threshold voltage VGS(th) VDS = 10V, ID = 1mA 0.3 - 1.0 V Gate threshold voltage ΔVGS(th) ID = 1mA - -1.4 - mV/℃ temperature coefficient ΔTj referenced to 25℃ VGS = 4.5V, ID = 200mA - 1.6 2.2 VGS = 2.5V, ID = 200mA - 1.7 2.4 Static drain - source R *4 V Ω on - state resistance DS(on) GS = 1.8V, ID = 100mA - 1.9 2.7 VGS = 1.5V, ID = 40mA - 2.0 4.0 VGS = 1.2V, ID = 20mA - 2.4 7.2 Forward Transfer |Y Admittance fs|*4 VDS = 10V, ID = 200mA 0.4 - - S *1 Pw≦10μs, Duty cycle≦1% *2 Mounted on a ceramic board (7.0×5.0×0.8mm) *3 Mounted on a FR4 (20.0×12.0×0.8mm,Cu pad : 0.8mm2) *4 Pulsed www.rohm.com © 2024 ROHM Co., Ltd. All rights reserved. 2/11
20240905 - Rev.004
Datasheet l
Thermal resistance
Values Parameter Symbol Unit Min. Typ. Max. R *2 thJA - - 357 ℃/W Thermal resistance, junction - ambient R *3 thJA - - 625 ℃/W l
Electrical characteristics (Ta = 25°C)
Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V voltage (BR)DSS VGS = 0V, ID = 1mA 50 - - V Breakdown voltage ΔV(BR)DSS ID = 1mA - 53.7 - mV/℃ temperature coefficient ΔTj referenced to 25℃ Zero gate voltage I drain current DSS VDS = 50V, VGS = 0V - - 1 μA Gate - Source leakage current IGSS VGS = ±8V, VDS = 0V - - ±10 μA Gate threshold voltage VGS(th) VDS = 10V, ID = 1mA 0.3 - 1.0 V Gate threshold voltage ΔVGS(th) ID = 1mA - -1.4 - mV/℃ temperature coefficient ΔTj referenced to 25℃ VGS = 4.5V, ID = 200mA - 1.6 2.2 VGS = 2.5V, ID = 200mA - 1.7 2.4 Static drain - source R *4 V Ω on - state resistance DS(on) GS = 1.8V, ID = 100mA - 1.9 2.7 VGS = 1.5V, ID = 40mA - 2.0 4.0 VGS = 1.2V, ID = 20mA - 2.4 7.2 Forward Transfer |Y Admittance fs|*4 VDS = 10V, ID = 200mA 0.4 - - S *1 Pw≦10μs, Duty cycle≦1% *2 Mounted on a ceramic board (7.0×5.0×0.8mm) *3 Mounted on a FR4 (20.0×12.0×0.8mm,Cu pad : 0.8mm2) *4 Pulsed www.rohm.com © 2024 ROHM Co., Ltd. All rights reserved. 2/11
20240905 - Rev.004