Datasheet NV6287 (Navitas Semiconductor)
| Fabricante | Navitas Semiconductor |
| Descripción | GaNSense Motor Drive IC in half-bridge configuration |
| Páginas / Página | 34 / 1 — NV6287. GaNSense™ Motor Drive. 1. Features. in half-bridge configuration. … |
| Formato / tamaño de archivo | PDF / 2.3 Mb |
| Idioma del documento | Inglés |
NV6287. GaNSense™ Motor Drive. 1. Features. in half-bridge configuration. GaNSense™ Motor Drive half-bridge Power IC
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NV6287 GaNSense™ Motor Drive IC 1. Features in half-bridge configuration GaNSense™ Motor Drive half-bridge Power IC
• Wide VCC range (10 to 24 V) • Accurate loss-less bi-directional current sensing • 3.3, 5, 12 V PWM input compatible • Floating high-side with internal level shift • Two independent logic inputs with hysteresis • 200V/ns common mode transient immunity • Integrated high-side bootstrap • Shoot-through protection • Turn-on and turn-off dV/dt control (low-side and high- side) • Short circuit protection, low-side and high-side • Over-temperature protection • Autonomous low-current standby mode • Autonomous synchronous rectification mode •
QFN 8 x 10 mm Simplified schematic
Fault output and enable input • 800 V transient voltage rating
3. Description
• 650 V continuous voltage rating • 170 mΩ high-side FET, 170 mΩ low-side FET This half-bridge GaNFast™ power IC integrates high performance eMode GaN FETs with integrated gate drive, • 2 KV ESD Rating (HBM) control and protection to achieve unprecedented high- • 2 MHz operation frequency and high efficiency operation. GaNSense™ motor
Small, low profile SMT QFN
drive technology is also integrated which enables real-time, • 8x10 mm footprint, 0.85 mm profile accurate sensing of voltage, current and temperature to further • Minimized package inductance improve performance and robustness not achieved by any • Enlarged cooling pads discrete GaN or discrete silicon device. GaNSense™ motor
Sustainability
drive enables integrated loss-less current sensing which eliminates external current sensing resistors and increases • RoHS, Pb-free, REACH-compliant system efficiency. GaNSense™ motor drive also enables short • Up to 40% energy savings vs Si solutions circuit and over-temperature protection to increase system • System level 4kg CO2 Carbon Footprint reduction robustness, while auto-standby mode increases light, tiny & no-
Product Reliability
load efficiency. These GaN ICs combine the highest dV/dt • 20 immunity, high-speed integrated drive and thermally optimized, -year limited warranty low-inductance, QFN packaging to enable designers to achieve simple, quick, and reliable solutions. Navitas’ GaN IC
2. Topologies / Applications
technology extends the capabilities of traditional topologies • AC-DC, DC-DC such as active clamp flyback, half-bridge, buck/boost, LLC and • other resonant converters to reach MHz+ frequencies with very ACF, buck, boost, half bridge, full bridge, LLC, AHB, high efficiencies and low EMI to achieve unprecedented power Class D, PFC, Motor Drive densities at a very attractive cost structure.
4. Typical Application Circuits
Motor inverter LLC
Final Datasheet 1 Rev Apr. 29, 2025
• Wide VCC range (10 to 24 V) • Accurate loss-less bi-directional current sensing • 3.3, 5, 12 V PWM input compatible • Floating high-side with internal level shift • Two independent logic inputs with hysteresis • 200V/ns common mode transient immunity • Integrated high-side bootstrap • Shoot-through protection • Turn-on and turn-off dV/dt control (low-side and high- side) • Short circuit protection, low-side and high-side • Over-temperature protection • Autonomous low-current standby mode • Autonomous synchronous rectification mode •
QFN 8 x 10 mm Simplified schematic
Fault output and enable input • 800 V transient voltage rating
3. Description
• 650 V continuous voltage rating • 170 mΩ high-side FET, 170 mΩ low-side FET This half-bridge GaNFast™ power IC integrates high performance eMode GaN FETs with integrated gate drive, • 2 KV ESD Rating (HBM) control and protection to achieve unprecedented high- • 2 MHz operation frequency and high efficiency operation. GaNSense™ motor
Small, low profile SMT QFN
drive technology is also integrated which enables real-time, • 8x10 mm footprint, 0.85 mm profile accurate sensing of voltage, current and temperature to further • Minimized package inductance improve performance and robustness not achieved by any • Enlarged cooling pads discrete GaN or discrete silicon device. GaNSense™ motor
Sustainability
drive enables integrated loss-less current sensing which eliminates external current sensing resistors and increases • RoHS, Pb-free, REACH-compliant system efficiency. GaNSense™ motor drive also enables short • Up to 40% energy savings vs Si solutions circuit and over-temperature protection to increase system • System level 4kg CO2 Carbon Footprint reduction robustness, while auto-standby mode increases light, tiny & no-
Product Reliability
load efficiency. These GaN ICs combine the highest dV/dt • 20 immunity, high-speed integrated drive and thermally optimized, -year limited warranty low-inductance, QFN packaging to enable designers to achieve simple, quick, and reliable solutions. Navitas’ GaN IC
2. Topologies / Applications
technology extends the capabilities of traditional topologies • AC-DC, DC-DC such as active clamp flyback, half-bridge, buck/boost, LLC and • other resonant converters to reach MHz+ frequencies with very ACF, buck, boost, half bridge, full bridge, LLC, AHB, high efficiencies and low EMI to achieve unprecedented power Class D, PFC, Motor Drive densities at a very attractive cost structure.
4. Typical Application Circuits
Motor inverter LLC
Final Datasheet 1 Rev Apr. 29, 2025