Datasheet NV6287 (Navitas Semiconductor) - 4

NV6287 7. Specifications 7.1. Absolute Maximum Ratings (1) (with respect to PGND unless noted) SYMBOL PARAMETER MAX UNITS
VIN HV input 0 to +650 V VSW(CONT) Switch Node Continuous Voltage Rating -7 to +657 V V (2) SW(TRAN) Switch Node Transient Voltage Rating -10 to +800 V IDSL @ TC=100ºC Continuous Output Current (Low-side FET) 6.5 A IDSL PULSE@ TC=25ºC Pulsed Output Current (Low-side FET) 13 A IDSH @ TC=100ºC Continuous Output Current (High-side FET) 6.5 A IDSH PULSE@ TC=25ºC Pulsed Output Current (High-side FET) 13 A VB (to VSW) High-side Gate Driver Bootstrap Rail 30 V RDDH (to VSW) Hi-Side Turn-On dV/dt Setting Pin -0.3 to VB V RSSH (to VSW) Hi-Side Turn-Off dV/dt Setting Pin -0.3 to 5.3 V V Supply Voltage 30 V CC RDDL Low-Side Turn-On DV/DT Setting Pin -0.3 to VCC V RSSL Low-Side Turn-Off DV/DT Setting Pin -0.3 to 5.3 V VFLT/EN FLT/EN Pin Voltage -0.3 to VCC V IFLT/EN FLT/EN Pull-Up Current 5m A V PWM Input Pin Voltages -0.6 to +20 or V INH, VINL CC V V CS Pin Voltage -0.3 to 5.3 V CS ICSP External Current Sense Positive Input Voltage -0.3 to 5.3 V ICSN External Current Sense Negative Input Voltage -0.3 to 5.3 V dV/dt (3) Slew Rate ±200 V/ns T Junction Temperature -55 to 150 ºC J T Storage Temperature -55 to 150 ºC STOR (1) Absolute maximum ratings are stress ratings; devices subjected to stresses beyond these ratings may cause permanent damage. (2) VDS (TRAN) rating allows for surge ratings during non-repetitive events that are <100us (for example start-up, line interruption). VDS (TRAN) rating allows for repetitive events that are <300ns, with 80% derating required (for example repetitive leakage inductance spikes). (3) Max dV/dt rating is based on stress ratings and common mode transient immunity
Final Datasheet 4 Rev Apr. 29, 2025