Datasheet BIDD05N60T (Bourns) - 8

FabricanteBourns
DescripciónInsulated Gate Bipolar Transistor (IGBT)
Páginas / Página10 / 8 — BIDD05N60T Insulated Gate Bipolar Transistor (IGBT). Inductive Load Test …
Formato / tamaño de archivoPDF / 250 Kb
Idioma del documentoInglés

BIDD05N60T Insulated Gate Bipolar Transistor (IGBT). Inductive Load Test Circuit. How to Order. B I D D 05 N 60 T

BIDD05N60T Insulated Gate Bipolar Transistor (IGBT) Inductive Load Test Circuit How to Order B I D D 05 N 60 T

Línea de modelo para esta hoja de datos

Versión de texto del documento

BIDD05N60T Insulated Gate Bipolar Transistor (IGBT) Inductive Load Test Circuit How to Order B I D D 05 N 60 T
B = Bourns® D I = IGBT L Type D = Discrete Packaging Code IC D = TO-252 (DPAK) V Current Rating CE VCC 05 = 5 A R Device Type G D.U.T. N = N-channel Nominal Voltage (divided by 10) 60 = 600 V VGE Optimization T = Medium Speed
Environmental Characteristics
Moisture Sensitivity Level ...3 L = 11.2 mH, VCE = 400 V, VGE = 15 V, IC = 5 A, RG = 10 Ω ESD Class (HBM) .. 1B
Product Dimensions
E A
Symbol Min. Nom. Max.
b1 c1 2.10 2.30 2.50 A (.083) (.091) (.098) H 0.127 A1 0 — (.005) D 0.66 0.76 0.89 b (.026) (.030) (.035) A1 5.10 5.33 5.46 b1 L1 L2 (.201) (.210) (.215) L 0.45 0.65 e b c c — (.018) (.026) 0.45 0.65 MM c1 — DIMENSIONS: (.018) (.026) (INCHES) 5.80 6.10 6.40 D (.228) (.240) (.252) 6.30 6.60 6.90 E (.248) (.260) (.272) 2.30 e TYP (.091) 9.60 10.10 10.60 H (.378) (.398) (.417) 1.40 1.50 1.70 L (.055) (.059) (.067) 2.90 Specifications are subject to change without notice. L1 REF (.114) Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers 0.60 0.80 1.00 as set forth on the last page of this document, and at L2 (.024) (.031) (.039) www.bourns.com/docs/legal/disclaimer.pdf.