Datasheet IXGH32N170A (Littelfuse) - 2
| Fabricante | Littelfuse |
| Descripción | Disc IGBT NPT-Hi Voltage TO-247AD | Series: High Voltage |
| Páginas / Página | 6 / 2 — IXGH 32N170A IXGT 32N170A. Symbol. Test Conditions. Characteristic … |
| Formato / tamaño de archivo | PDF / 635 Kb |
| Idioma del documento | Inglés |
IXGH 32N170A IXGT 32N170A. Symbol. Test Conditions. Characteristic Values. TO-247 AD Outline. min. typ. max. ies. oes. res
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IXGH 32N170A IXGT 32N170A Symbol Test Conditions Characteristic Values TO-247 AD Outline
(T = 25°C, unless otherwise specified) J
min. typ. max. g
I = I ; V = 10 V 16 26 S
fs
C 90 CE Note 2 ∅ P
C
3700 pF
ies C
V = 25 V, V = 0 V, f = 1 MHz 180 pF
oes
CE GE
C
43 pF
res Q
155 nC
g Q
I = I , V = 15 V, V = 0.5 V 28 nC
ge
C C90 GE CE CES e
Q
49 nC Dim. Millimeter Inches
gc
Min. Max. Min. Max.
t Inductive load, T = 25
°
C
46 ns A 4.7 5.3 .185 .209
d(on) J
A 2.2 2.54 .087 .102 1
t
I = I , V = 15 V 57 ns A 2.2 2.6 .059 .098
ri
C C25 GE 2 b 1.0 1.4 .040 .055
t
R = 2.7 Ω, V = 0.5 V 260 500 ns
d(off)
G CE CES b 1.65 2.13 .065 .084 1 Note 3 b 2.87 3.12 .113 .123
t
50 100 ns 2
fi
C .4 .8 .016 .031
E
1.5 2.6 mJ
off
D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225
t Inductive load, T = 125
°
C
48 ns L 19.81 20.32 .780 .800
d(on) J
L1 4.50 .177
t
I = I , V = 15 V 59 ns
ri
C C25 GE ∅P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252
E
R = 2.7 Ω, V = 0.5 V 4.0 mJ
on
G CE CES R 4.32 5.49 .170 .216
t
Note 3 300 ns
d(off)
S 6.15 BSC 242 BSC
t
70 ns
fi E
2.4 mJ
off TO-268 Outline R
0.35 K/W
thJC R
(TO-247) 0.25 K/W
thCK
Notes: 1. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. 2. Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 3. Switching times may increase for V (Clamp) > 0.8 • V , higher T or CE CES J Dim. Millimeter Inches increased R . G Min. Max. Min. Max. A 4.9 5.1 .193 .201 A 2.7 2.9 .106 .114 1 A .02 .25 .001 .010 2 b 1.15 1.45 .045 .057 b 1.9 2.1 .75 .83 2 C .4 .65 .016 .026 D 13.80 14.00 .543 .551 E 15.85 16.05 .624 .632 E 13.3 13.6 .524 .535 1 e 5.45 BSC .215 BSC H 18.70 19.10 .736 .752 L 2.40 2.70 .094 .106 L1 1.20 1.40 .047 .055 L2 1.00 1.15 .039 .045 L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463
(T = 25°C, unless otherwise specified) J
min. typ. max. g
I = I ; V = 10 V 16 26 S
fs
C 90 CE Note 2 ∅ P
C
3700 pF
ies C
V = 25 V, V = 0 V, f = 1 MHz 180 pF
oes
CE GE
C
43 pF
res Q
155 nC
g Q
I = I , V = 15 V, V = 0.5 V 28 nC
ge
C C90 GE CE CES e
Q
49 nC Dim. Millimeter Inches
gc
Min. Max. Min. Max.
t Inductive load, T = 25
°
C
46 ns A 4.7 5.3 .185 .209
d(on) J
A 2.2 2.54 .087 .102 1
t
I = I , V = 15 V 57 ns A 2.2 2.6 .059 .098
ri
C C25 GE 2 b 1.0 1.4 .040 .055
t
R = 2.7 Ω, V = 0.5 V 260 500 ns
d(off)
G CE CES b 1.65 2.13 .065 .084 1 Note 3 b 2.87 3.12 .113 .123
t
50 100 ns 2
fi
C .4 .8 .016 .031
E
1.5 2.6 mJ
off
D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225
t Inductive load, T = 125
°
C
48 ns L 19.81 20.32 .780 .800
d(on) J
L1 4.50 .177
t
I = I , V = 15 V 59 ns
ri
C C25 GE ∅P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252
E
R = 2.7 Ω, V = 0.5 V 4.0 mJ
on
G CE CES R 4.32 5.49 .170 .216
t
Note 3 300 ns
d(off)
S 6.15 BSC 242 BSC
t
70 ns
fi E
2.4 mJ
off TO-268 Outline R
0.35 K/W
thJC R
(TO-247) 0.25 K/W
thCK
Notes: 1. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. 2. Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 3. Switching times may increase for V (Clamp) > 0.8 • V , higher T or CE CES J Dim. Millimeter Inches increased R . G Min. Max. Min. Max. A 4.9 5.1 .193 .201 A 2.7 2.9 .106 .114 1 A .02 .25 .001 .010 2 b 1.15 1.45 .045 .057 b 1.9 2.1 .75 .83 2 C .4 .65 .016 .026 D 13.80 14.00 .543 .551 E 15.85 16.05 .624 .632 E 13.3 13.6 .524 .535 1 e 5.45 BSC .215 BSC H 18.70 19.10 .736 .752 L 2.40 2.70 .094 .106 L1 1.20 1.40 .047 .055 L2 1.00 1.15 .039 .045 L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463