Datasheet 4N38M, H11D1M, H11D3M, MOC8204M (ON Semiconductor) - 4
| Fabricante | ON Semiconductor |
| Descripción | 6-pin DIP High Voltage Phototransistor Output Optocoupler |
| Páginas / Página | 10 / 4 — 4N38M, H11D1M, H11D3M, MOC8204M. ELECTRICAL CHARACTERISTICS. Symbol. … |
| Formato / tamaño de archivo | PDF / 350 Kb |
| Idioma del documento | Inglés |
4N38M, H11D1M, H11D3M, MOC8204M. ELECTRICAL CHARACTERISTICS. Symbol. Characteristic. Test Conditions. Device. Min. Typ. Max. Unit
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4N38M, H11D1M, H11D3M, MOC8204M ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Symbol Characteristic Test Conditions Device Min Typ Max Unit INDIVIDUAL COMONENT CHARACTERISTICS Emitter
VF Forward Voltage (Note 3) IF = 10 mA All − 1.15 1.50 V ΔVF Forward Voltage Temperature All − −1.8 − mV/°C ΔTA Coefficient BVR Reverse Breakdown Voltage IR = 10 μA All 6 25 − V CJ Junction Capacitance VF = 0 V, f = 1 MHz All − 50 − pF VF = 1 V, f = 1 MHz − 65 − pF IR Reverse Leakage Current VR = 6 V All − 0.05 10 μA (Note 3)
Detector
BVCEO Breakdown Voltage RBE = 1 MΩ, MOC8204M 400 − − V Collector−to−Emitter (Note 3) IC = 1.0 mA, IF = 0 H11D1M 300 − − V H11D3M 200 − − V No RBE, IC = 1.0 mA 4N38M 80 − − V BVCBO Collector to Base (Note 3) IC = 100 μA, IF = 0 MOC8204M 400 − − V H11D1M 300 − − V H11D3M 200 − − V 4N38M 80 − − V BVEBO Emitter to Base IE = 100 μA, IF = 0 4N38M 7 − − V BVECO Emitter to Collector IE = 100 μA, IF = 0 All 7 10 − V ICEO Leakage Current Collector to VCE = 300 V, IF = 0, TA = 25°C MOC8204M − − 100 nA Emitter (Note 3) (RBE = 1 MΩ) VCE = 300 V, IF = 0, TA = 100°C − − 250 μA VCE = 200 V, IF = 0, TA = 25°C H11D1M − − 100 nA VCE = 200 V, IF = 0, TA = 100°C − − 250 μA VCE = 100 V, IF = 0, TA = 25°C H11D3M − − 100 nA VCE = 100 V, IF = 0, TA = 100°C − − 250 μA No RBE, VCE = 60 V, IF = 0, TA = 25°C 4N38M − − 50 nA
TRANSFER CHARACTERISTICS Emitter
CTR Current Transfer Ratio, IF = 10 mA, VCE = 10 V, H11D1M, 2 (20) − − mA (%) Collector−to−Emitter RBE = 1 MΩ H11D3M, MOC8204M IF = 10 mA, VCE = 10 V 4N38M 2 (20) − − mA (%) VCE(SAT) Saturation Voltage (Note 3) IF = 10 mA, IC = 0.5 mA, H11D1M, − 0.1 0.4 V RBE = 1 MΩ H11D3M, MOC8204M IF = 20 mA, IC = 4 mA 4N38M − − 1.0 V
Switching Times
tON Non−Saturated Turn−on Time VCE = 10 V, IC = 2 mA, All − 5 − μs RL = 100 Ω tOFF Turn−off Time All − 5 − μs
ISOLATION CHARACTERISTICS
VISO Input−Output Isolation Voltage t = 1 Minute 4170 − − VACRMS CISO Isolation Capacitance VI−O = 0 V, f = 1 MHz − 0.2 − pF RISO Isolation Resistance VI−O = ±500 VDC, TA = 25°C 1011 − − Ω Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Parameters meet or exceed JEDEC registered data (for 4N38M only).
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4N38M, H11D1M, H11D3M, MOC8204M ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Symbol Characteristic Test Conditions Device Min Typ Max Unit INDIVIDUAL COMONENT CHARACTERISTICS Emitter
VF Forward Voltage (Note 3) IF = 10 mA All − 1.15 1.50 V ΔVF Forward Voltage Temperature All − −1.8 − mV/°C ΔTA Coefficient BVR Reverse Breakdown Voltage IR = 10 μA All 6 25 − V CJ Junction Capacitance VF = 0 V, f = 1 MHz All − 50 − pF VF = 1 V, f = 1 MHz − 65 − pF IR Reverse Leakage Current VR = 6 V All − 0.05 10 μA (Note 3)
Detector
BVCEO Breakdown Voltage RBE = 1 MΩ, MOC8204M 400 − − V Collector−to−Emitter (Note 3) IC = 1.0 mA, IF = 0 H11D1M 300 − − V H11D3M 200 − − V No RBE, IC = 1.0 mA 4N38M 80 − − V BVCBO Collector to Base (Note 3) IC = 100 μA, IF = 0 MOC8204M 400 − − V H11D1M 300 − − V H11D3M 200 − − V 4N38M 80 − − V BVEBO Emitter to Base IE = 100 μA, IF = 0 4N38M 7 − − V BVECO Emitter to Collector IE = 100 μA, IF = 0 All 7 10 − V ICEO Leakage Current Collector to VCE = 300 V, IF = 0, TA = 25°C MOC8204M − − 100 nA Emitter (Note 3) (RBE = 1 MΩ) VCE = 300 V, IF = 0, TA = 100°C − − 250 μA VCE = 200 V, IF = 0, TA = 25°C H11D1M − − 100 nA VCE = 200 V, IF = 0, TA = 100°C − − 250 μA VCE = 100 V, IF = 0, TA = 25°C H11D3M − − 100 nA VCE = 100 V, IF = 0, TA = 100°C − − 250 μA No RBE, VCE = 60 V, IF = 0, TA = 25°C 4N38M − − 50 nA
TRANSFER CHARACTERISTICS Emitter
CTR Current Transfer Ratio, IF = 10 mA, VCE = 10 V, H11D1M, 2 (20) − − mA (%) Collector−to−Emitter RBE = 1 MΩ H11D3M, MOC8204M IF = 10 mA, VCE = 10 V 4N38M 2 (20) − − mA (%) VCE(SAT) Saturation Voltage (Note 3) IF = 10 mA, IC = 0.5 mA, H11D1M, − 0.1 0.4 V RBE = 1 MΩ H11D3M, MOC8204M IF = 20 mA, IC = 4 mA 4N38M − − 1.0 V
Switching Times
tON Non−Saturated Turn−on Time VCE = 10 V, IC = 2 mA, All − 5 − μs RL = 100 Ω tOFF Turn−off Time All − 5 − μs
ISOLATION CHARACTERISTICS
VISO Input−Output Isolation Voltage t = 1 Minute 4170 − − VACRMS CISO Isolation Capacitance VI−O = 0 V, f = 1 MHz − 0.2 − pF RISO Isolation Resistance VI−O = ±500 VDC, TA = 25°C 1011 − − Ω Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Parameters meet or exceed JEDEC registered data (for 4N38M only).
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