Datasheet DMP10H400SK3 (Diodes) - 2
| Fabricante | Diodes |
| Descripción | P-Channel Enhancement Mode MOSFET |
| Páginas / Página | 6 / 2 — DMP10H400SK3. Maximum Ratings. Characteristic. Symbol. Value. Units. … |
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DMP10H400SK3. Maximum Ratings. Characteristic. Symbol. Value. Units. Thermal Characteristics. E N. Electrical Characteristics. Min. Typ. Max
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DMP10H400SK3 Maximum Ratings
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage VDSS -100 V Gate-Source Voltage VGSS ±20 V T -9
T
Steady C = +25°C Continuous Drain Current (Note 5) VGS = -10V I A State D
C
TC = +100°C -5.5
U
Maximum Body Diode Forward Current (Note 5) IS -4 A
D
Pulsed Drain Current (10μs pulse, duty cycle = 1%) IDM -15 A
O R P W Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
E N Characteristic Symbol Value Units
T 42 Total Power Dissipation (Note 5) C = +25°C PD W TC = +100°C 17 Thermal Resistance, Junction to Ambient (Note 5) RθJA 44 °C/W Thermal Resistance, Junction to Case (Note 5) RθJC 3 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BVDSS -100 V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS -1 µA VDS = -80V, VGS = 0V Gate-Source Leakage IGSS ±100 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS(th) -1 -3 V VDS = VGS, ID = -250µA 190 240 V Static Drain-Source On-Resistance GS = -10V, ID = -5A RDS (ON) mΩ 210 300 VGS = -4.5V, ID =-5A Diode Forward Voltage VSD -0.7 -1.2 V VGS = 0V, IS = -5A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance Ciss 1239 Output Capacitance Coss 42 pF VDS = -25V, VGS = 0V, f = 1MHz Reverse Transfer Capacitance Crss 28 Gate Resistance RG 13 Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -4.5V) Qg 8.4 Total Gate Charge (VGS = -10V) Qg 17.5 nC VDS = -60V, ID = -5A Gate-Source Charge Qgs 2.8 Gate-Drain Charge Qgd 3.2 Turn-On Delay Time tD(on) 9.1 Turn-On Rise Time tr 14.9 ns VDD = -50V, RG = 9.1Ω, ID = -5A Turn-Off Delay Time tD(off) 57.4 Turn-Off Fall Time tf 34.4 Body Diode Reverse Recovery Time trr 25.2 ns VGS = 0V, IS = -5A, dI/dt = 100A/μs Body Diode Reverse Recovery Charge Qrr 24.5 nC VGS = 0V, IS = -5A, dI/dt = 100A/μs Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design; not subject to production testing. DMP10H400SK3 2 of 6 October 2014 Document number: DS35932 Rev. 5 - 2
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© Diodes Incorporated
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage VDSS -100 V Gate-Source Voltage VGSS ±20 V T -9
T
Steady C = +25°C Continuous Drain Current (Note 5) VGS = -10V I A State D
C
TC = +100°C -5.5
U
Maximum Body Diode Forward Current (Note 5) IS -4 A
D
Pulsed Drain Current (10μs pulse, duty cycle = 1%) IDM -15 A
O R P W Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
E N Characteristic Symbol Value Units
T 42 Total Power Dissipation (Note 5) C = +25°C PD W TC = +100°C 17 Thermal Resistance, Junction to Ambient (Note 5) RθJA 44 °C/W Thermal Resistance, Junction to Case (Note 5) RθJC 3 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BVDSS -100 V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS -1 µA VDS = -80V, VGS = 0V Gate-Source Leakage IGSS ±100 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS(th) -1 -3 V VDS = VGS, ID = -250µA 190 240 V Static Drain-Source On-Resistance GS = -10V, ID = -5A RDS (ON) mΩ 210 300 VGS = -4.5V, ID =-5A Diode Forward Voltage VSD -0.7 -1.2 V VGS = 0V, IS = -5A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance Ciss 1239 Output Capacitance Coss 42 pF VDS = -25V, VGS = 0V, f = 1MHz Reverse Transfer Capacitance Crss 28 Gate Resistance RG 13 Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -4.5V) Qg 8.4 Total Gate Charge (VGS = -10V) Qg 17.5 nC VDS = -60V, ID = -5A Gate-Source Charge Qgs 2.8 Gate-Drain Charge Qgd 3.2 Turn-On Delay Time tD(on) 9.1 Turn-On Rise Time tr 14.9 ns VDD = -50V, RG = 9.1Ω, ID = -5A Turn-Off Delay Time tD(off) 57.4 Turn-Off Fall Time tf 34.4 Body Diode Reverse Recovery Time trr 25.2 ns VGS = 0V, IS = -5A, dI/dt = 100A/μs Body Diode Reverse Recovery Charge Qrr 24.5 nC VGS = 0V, IS = -5A, dI/dt = 100A/μs Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design; not subject to production testing. DMP10H400SK3 2 of 6 October 2014 Document number: DS35932 Rev. 5 - 2
www.diodes.com
© Diodes Incorporated