Datasheet DMP10H400SK3 (Diodes) - 3
Fabricante | Diodes |
Descripción | P-Channel Enhancement Mode MOSFET |
Páginas / Página | 6 / 3 — DMP10H400SK3. www.diodes.com |
Formato / tamaño de archivo | PDF / 519 Kb |
Idioma del documento | Inglés |
DMP10H400SK3. www.diodes.com

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DMP10H400SK3
8.0 10 V = -10.0V GS 7.0 V = -5.0V DS V = -5.0V GS ) 6.0 ) A( V = -4.5V A GS ( T V = -4.0V T GS
T
N 5.0 N E E
C
R V = -3.5V GS R R R
U
U 4.0 U C 1 C
D
NI N V = -3.0V I
O
A GS 3.0 A R R
R
D D , T = 150 C A
P
I D I D - 2.0 - T = 125 C A V = -2.8V T = 85 C GS A
W E
1.0 T = 25 C A
N
T = -55 C A 0 0.1 0 1 2 3 4 5 0 1 2 3 4 5 -V , DRAIN -SOURCE VOLTAGE (V) -V , GATE-SOURCE VOLTAGE (V) DS GS Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics ) 0.5 ) 0.50 ( E E 0.45 C C N N 0.4 A A 0.40 T T S S I I S S 0.35 E E R R - - 0.3 N N 0.30 O O E V = -4.5V GS E C 0.25 C R R U U 0.2 O O 0.20 I = -5.0A V = -10V D S GS S - - N N I I 0.15 A A R R D 0.1 D 0.10 , ) N N O O ( 0.05 S S D D R 0 R 0 1 2 3 4 5 6 7 8 9 10 1 2 3 4 5 6 7 8 9 10 -I , DRAIN SOURCE CURRENT (A) V , GATE-SOURCE VOLTAGE (V) D GS Fig. 3 Typical On-Resistance vs. Fig. 4 Typical Drain-Source On-Resistance Drain Current and Gate Voltage vs. Gate-Source Voltage ) 0.5 2.4 ( T = 150 C V = -4.5V A GS E C ) V = -10V GS N D A 0.4 2.0 I = -10A D T E S T = 125 C Z I A E I L S C A E R R U M - O R N 0.3 T = 85 C A O 1.6 S O - N N( E I E V = -4.5V GS C A I = -5A R R C D U D N 0.2 T = 25 C , A O A ) 1.2 T S N - O S ( I NI S S D A E R R R- D 0.1 T = -55 C N 0.8 , A ) O N O( S DR 0 0.4 0 1 2 3 4 5 6 7 8 -50 -25 0 25 50 75 100 125 150 -I , DRAIN SOURCE CURRENT (A) T , JUNCTION TEMPERATURE ( C ) D J Fig. 5 Typical On-Resistance vs. Fig. 6 On-Resistance Variation with Temperature Drain Current and Temperature DMP10H400SK3 3 of 6 October 2014 Document number: DS35932 Rev. 5 - 2
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