Datasheet PSMN9R0-30YL (Nexperia) - 3
| Fabricante | Nexperia |
| Descripción | N-channel 30 V 8 mΩ logic level MOSFET in LFPAK |
| Páginas / Página | 14 / 3 — NXP Semiconductors. PSMN9R0-30YL. N-channel 30 V 8 mΩ logic level MOSFET … |
| Revisión | 10201103 |
| Formato / tamaño de archivo | PDF / 394 Kb |
| Idioma del documento | Inglés |
NXP Semiconductors. PSMN9R0-30YL. N-channel 30 V 8 mΩ logic level MOSFET in LFPAK. Fig 1
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NXP Semiconductors PSMN9R0-30YL N-channel 30 V 8 mΩ logic level MOSFET in LFPAK
003aac545 03aa16 80 120 ID (A) Pder (%) 60 80 40 40 20 0 0 0 50 100 150 200 0 50 100 150 200 Tmb (°C) Tmb (°C)
Fig 1. Continuous drain current as a function of Fig 2. Normalized total power dissipation as a mounting base temperature function of mounting base temperature
003aac547 103 ID (A) Limit R 10 DSon = VDS / ID μs 102 100 μs 10 1 ms DC 10 ms 1 100 ms 10-1 10-1 1 10 102 VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN9R0-30YL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 04 — 9 March 2011 3 of 14
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Package outline 8. Revision history 9. Legal information 9.1 Data sheet status 9.2 Definitions 9.3 Disclaimers 9.4 Trademarks 10. Contact information 11. Contents
003aac545 03aa16 80 120 ID (A) Pder (%) 60 80 40 40 20 0 0 0 50 100 150 200 0 50 100 150 200 Tmb (°C) Tmb (°C)
Fig 1. Continuous drain current as a function of Fig 2. Normalized total power dissipation as a mounting base temperature function of mounting base temperature
003aac547 103 ID (A) Limit R 10 DSon = VDS / ID μs 102 100 μs 10 1 ms DC 10 ms 1 100 ms 10-1 10-1 1 10 102 VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN9R0-30YL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 04 — 9 March 2011 3 of 14
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Package outline 8. Revision history 9. Legal information 9.1 Data sheet status 9.2 Definitions 9.3 Disclaimers 9.4 Trademarks 10. Contact information 11. Contents