Datasheet IRGPS60B120KDP (Infineon) - 4
| Fabricante | Infineon |
| Descripción | Insulated Gate Bipolar Transistor (IGBT) with Ultrafast Soft Recovery Diode in TO-274AA package |
| Páginas / Página | 12 / 4 — Fig. 5. Fig. 6. Fig. 7. Fig. 8 |
| Formato / tamaño de archivo | PDF / 142 Kb |
| Idioma del documento | Inglés |
Fig. 5. Fig. 6. Fig. 7. Fig. 8
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IRGPS60B120KDP 120 120 V V GE = 18V GE = 18V 100 100 VGE = 15V VGE = 15V VGE = 12V VGE = 12V VGE = 10V VGE = 10V 80 80 VGE = 8.0V VGE = 8.0V ) A A ( 60 60 E E I C I C 40 40 20 20 0 0 0 1 2 3 4 5 0 1 2 3 4 5 V V CE (V) CE (V)
Fig. 5
- Typ. IGBT Output Characteristics
Fig. 6
- Typ. IGBT Output Characteristics T T J = -40°C; tp = 80µs J = 25°C; tp = 80µs 120 120 VGE = 18V -40°C 100 VGE = 15V 100 25°C VGE = 12V 125°C VGE = 10V 80 80 VGE = 8.0V ) A ) ( A 60 ( E 60 I C I F 40 40 20 20 0 0 0 1 2 3 4 5 0 1 2 3 VCE (V) VF (V)
Fig. 7
- Typ. IGBT Output Characteristics
Fig. 8
- Typ. Diode Forward Characteristics T tp = 80µs J = 125°C; tp = 80µs 4 www.irf.com
Fig. 5
- Typ. IGBT Output Characteristics
Fig. 6
- Typ. IGBT Output Characteristics T T J = -40°C; tp = 80µs J = 25°C; tp = 80µs 120 120 VGE = 18V -40°C 100 VGE = 15V 100 25°C VGE = 12V 125°C VGE = 10V 80 80 VGE = 8.0V ) A ) ( A 60 ( E 60 I C I F 40 40 20 20 0 0 0 1 2 3 4 5 0 1 2 3 VCE (V) VF (V)
Fig. 7
- Typ. IGBT Output Characteristics
Fig. 8
- Typ. Diode Forward Characteristics T tp = 80µs J = 125°C; tp = 80µs 4 www.irf.com