Datasheet IRGPS60B120KDP (Infineon) - 5
| Fabricante | Infineon |
| Descripción | Insulated Gate Bipolar Transistor (IGBT) with Ultrafast Soft Recovery Diode in TO-274AA package |
| Páginas / Página | 12 / 5 — Fig. 9. Fig. 10. Fig. 11. Fig. 12 |
| Formato / tamaño de archivo | PDF / 142 Kb |
| Idioma del documento | Inglés |
Fig. 9. Fig. 10. Fig. 11. Fig. 12
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IRGPS60B120KDP 20 20 18 18 16 16 14 14 ) 12 I ) 12 I V CE = 30A CE = 30A ( V ( E 10 ICE = 60A E 10 ICE = 60A C C V I I 8 CE = 120A V 8 CE = 120A 6 6 4 4 2 2 0 0 5 10 15 20 5 10 15 20 VGE (V) VGE (V)
Fig. 9
- Typical V
Fig. 10
- Typical V CE vs. VGE CE vs. VGE T T J = -40°C J = 25°C 20 500 18 450 TJ = 25°C 400 T 16 J = 125°C 350 14 ) I 300 ) V 12 CE = 30A ( A ( E ICE = 60A 250 E C 10 V ICE = 120A I C 200 8 150 6 100 TJ = 125°C 4 50 TJ = 25°C 2 0 5 10 15 20 0 5 10 15 20 VGE (V) VGE (V)
Fig. 11
- Typical VCE vs. VGE
Fig. 12
- Typ. Transfer Characteristics TJ = 125°C VCE = 50V; tp = 10µs www.irf.com 5
Fig. 9
- Typical V
Fig. 10
- Typical V CE vs. VGE CE vs. VGE T T J = -40°C J = 25°C 20 500 18 450 TJ = 25°C 400 T 16 J = 125°C 350 14 ) I 300 ) V 12 CE = 30A ( A ( E ICE = 60A 250 E C 10 V ICE = 120A I C 200 8 150 6 100 TJ = 125°C 4 50 TJ = 25°C 2 0 5 10 15 20 0 5 10 15 20 VGE (V) VGE (V)
Fig. 11
- Typical VCE vs. VGE
Fig. 12
- Typ. Transfer Characteristics TJ = 125°C VCE = 50V; tp = 10µs www.irf.com 5